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Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics.

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Názov: Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics.
Autori: Zheng Shi, Xumin Gao, Jialei Yuan, Shuai Zhang, Yan Jiang, Fenghua Zhang, Yuan Jiang, Hongbo Zhu, Yongjin Wang
Zdroj: Applied Physics Letters; 12/11/2017, Vol. 111 Issue 24, p241104-1-241104-4, 4p, 2 Diagrams, 2 Graphs
Predmety: WAVEGUIDES, OPTOELECTRONICS, PHOTONICS, ELECTROLUMINESCENCE measurement, SCANNING electron microscopy
Abstrakt: A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics. [ABSTRACT FROM AUTHOR]
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Databáza: Complementary Index
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Abstrakt:A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics. [ABSTRACT FROM AUTHOR]
ISSN:00036951
DOI:10.1063/1.5010892