View in EDS

More-than-Moore Approaches Implemented Using van der Waals Heterostructures.

Saved in:
Bibliographic Details
Title: More-than-Moore Approaches Implemented Using van der Waals Heterostructures.
Authors: Lee S; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.; Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea., Kim YK; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea., Noh J; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.; Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea., Jang BC; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea., Lee S; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.; Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea.; Department of Nano Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Source: ACS nano [ACS Nano] 2025 Aug 19; Vol. 19 (32), pp. 29028-29048. Date of Electronic Publication: 2025 Aug 05.
Publication Type: Journal Article; Review
Language: English
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: PubMed not MEDLINE; MEDLINE
Imprint Name(s): Original Publication: Washington D.C. : American Chemical Society
Abstract: Two-dimensional (2D) materials and van der Waals (vdW) heterostructures have emerged as key enablers in addressing the fundamental limitations of silicon-based technologies, driving advancements in next-generation electronic systems. Their high carrier mobility, tunable electronic characteristics, and absence of dangling bonds, combined with their compatibility with thin-film fabrication and wafer-scale integration, allow for the seamless integration of memory, logic, and sensing into compact, energy-efficient architectures. This review highlights the transformative role of 2D materials and vdW heterostructures in reshaping computing paradigms, focusing on emerging computing (in-memory, in-sensor, bioinspired, probabilistic, and quantum) and digital security (true random number generator (TRNG) and physical unclonable functions (PUFs)). By overcoming memory-wall challenges and enabling ultralow latency and parallel processing, these advancements provide tailored solutions for artificial intelligence, edge computing, and the Internet of Things. Furthermore, the physical properties of 2D materials─including scalability, high carrier mobility, spin-orbit coupling, and quantum fluctuations─expand possibilities across computing domains. These properties not only enhance emerging computing technologies but also strengthen entropy-based random number generation and variability-driven security mechanisms in digital security applications. To fully realize these advancements and the transition from fundamental research to large-scale implementation, continued progress in materials engineering and device fabrication is essential for achieving scalable, energy-efficient, and multifunctional computing systems.
Contributed Indexing: Keywords: In-sensor computing; data-centric computing; in-memory computing; neuromorphic computing; physical unclonable functions (PUFs); probabilistic computing; quantum computing; true-random number generator (TRNG); two-dimensional materials; van der Waals heterostructures
Entry Date(s): Date Created: 20250805 Latest Revision: 20250819
Update Code: 20250827
DOI: 10.1021/acsnano.5c07260
PMID: 40763191
Database: MEDLINE
Description
Abstract:Two-dimensional (2D) materials and van der Waals (vdW) heterostructures have emerged as key enablers in addressing the fundamental limitations of silicon-based technologies, driving advancements in next-generation electronic systems. Their high carrier mobility, tunable electronic characteristics, and absence of dangling bonds, combined with their compatibility with thin-film fabrication and wafer-scale integration, allow for the seamless integration of memory, logic, and sensing into compact, energy-efficient architectures. This review highlights the transformative role of 2D materials and vdW heterostructures in reshaping computing paradigms, focusing on emerging computing (in-memory, in-sensor, bioinspired, probabilistic, and quantum) and digital security (true random number generator (TRNG) and physical unclonable functions (PUFs)). By overcoming memory-wall challenges and enabling ultralow latency and parallel processing, these advancements provide tailored solutions for artificial intelligence, edge computing, and the Internet of Things. Furthermore, the physical properties of 2D materials─including scalability, high carrier mobility, spin-orbit coupling, and quantum fluctuations─expand possibilities across computing domains. These properties not only enhance emerging computing technologies but also strengthen entropy-based random number generation and variability-driven security mechanisms in digital security applications. To fully realize these advancements and the transition from fundamental research to large-scale implementation, continued progress in materials engineering and device fabrication is essential for achieving scalable, energy-efficient, and multifunctional computing systems.
ISSN:1936-086X
DOI:10.1021/acsnano.5c07260