| Autori: |
Wu G; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.; Shanghai Qi Zhi Institute, Xuhui District, Shanghai, China.; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China., Zhang X; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.; Shanghai Qi Zhi Institute, Xuhui District, Shanghai, China.; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China., Feng G; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China., Wang J; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China., Zhou K; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China., Zeng J; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China., Dong D; Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China., Zhu F; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China., Yang C; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China., Zhao X; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China., Gong D; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China., Zhang M; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China., Tian B; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China. bbtian@ee.ecnu.edu.cn., Duan C; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China., Liu Q; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China. qi_liu@fudan.edu.cn.; Shanghai Qi Zhi Institute, Xuhui District, Shanghai, China. qi_liu@fudan.edu.cn.; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China. qi_liu@fudan.edu.cn., Wang J; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China. jianluwang@fudan.edu.cn.; Shanghai Qi Zhi Institute, Xuhui District, Shanghai, China. jianluwang@fudan.edu.cn.; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China. jianluwang@fudan.edu.cn.; Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, China. jianluwang@fudan.edu.cn., Chu J; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China.; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.; Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, China., Liu M; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.; Shanghai Qi Zhi Institute, Xuhui District, Shanghai, China.; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China. |
Nájsť tento článok vo Web of Science