STABLE: Stress-Aware Boolean Matching to Mitigate BTI-Induced SNM Reduction in SRAM-Based FPGAs.

Gespeichert in:
Bibliographische Detailangaben
Titel: STABLE: Stress-Aware Boolean Matching to Mitigate BTI-Induced SNM Reduction in SRAM-Based FPGAs.
Autoren: Ghaderi, Zana1, Bagherzadeh, Nader2, Albaqsami, Ahmad2
Quelle: IEEE Transactions on Computers. Jan2018, Vol. 67 Issue 1, p102-114. 13p.
Schlagwörter: *SIMPLE Network Management Protocol (Computer network protocol), *ALGORITHMS, FIELD programmable gate arrays -- Design & construction, GRAPH theory, ROUTING (Computer network management)
Abstract: Biased-Temperature-Instability (BTI) aging mechanism reduces Static-Noise-Margin (SNM) of SRAM cells. This leads to a higher Soft-Error-Rate (SER), lower reliability, and lower SRAMs’ stability in FPGAs. SNM partially improves by leveraging the recovery phase of BTI through flipping SRAM content. We propose STABLE, a three-step post-synthesis stress-aware technique, in order to reduce the impact of BTI-induced SNM reduction in FPGA Look-up-Tables (LUTs) using the SAT-based Boolean Matching (BM) algorithm. STABLE partitions Data-Flow-Graph (DFG) of the implemented design into different cones. First, the SAT-based BM algorithm finds a new configuration for each cone while their functionalities are preserved and all SRAMs are flipped. Second, cones that did not pass the first step can benefit from unused SRAMs in their partially-used LUTs for storing the flipped configurations of such LUTs. Finally, flipped configurations of fully-used LUTs are stored in the closest unused LUTs. The main configuration of the implemented FPGA design is swapped by the new flipped configuration, periodically. Our extensive experimental analysis demonstrates 69 and 70 percent on average improvements in the SNM reduction () and the SER increase ( $\Delta SER$), respectively. Since the proposed methodology is deployed after the FPGA placement and routing of the application, the overhead is negligible. [ABSTRACT FROM PUBLISHER]
Copyright of IEEE Transactions on Computers is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Datenbank: Business Source Index
Beschreibung
Abstract:Biased-Temperature-Instability (BTI) aging mechanism reduces Static-Noise-Margin (SNM) of SRAM cells. This leads to a higher Soft-Error-Rate (SER), lower reliability, and lower SRAMs’ stability in FPGAs. SNM partially improves by leveraging the recovery phase of BTI through flipping SRAM content. We propose STABLE, a three-step post-synthesis stress-aware technique, in order to reduce the impact of BTI-induced SNM reduction in FPGA Look-up-Tables (LUTs) using the SAT-based Boolean Matching (BM) algorithm. STABLE partitions Data-Flow-Graph (DFG) of the implemented design into different cones. First, the SAT-based BM algorithm finds a new configuration for each cone while their functionalities are preserved and all SRAMs are flipped. Second, cones that did not pass the first step can benefit from unused SRAMs in their partially-used LUTs for storing the flipped configurations of such LUTs. Finally, flipped configurations of fully-used LUTs are stored in the closest unused LUTs. The main configuration of the implemented FPGA design is swapped by the new flipped configuration, periodically. Our extensive experimental analysis demonstrates 69 and 70 percent on average improvements in the SNM reduction () and the SER increase ( $\Delta SER$), respectively. Since the proposed methodology is deployed after the FPGA placement and routing of the application, the overhead is negligible. [ABSTRACT FROM PUBLISHER]
ISSN:00189340
DOI:10.1109/TC.2017.2725952