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Sintering kinetics and grain growth mechanisms of microwave sintered WC-10Co cemented carbide.

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Title:	Sintering kinetics and grain growth mechanisms of microwave sintered WC-10Co cemented carbide.
Authors:	Chen, Weiyou¹ (AUTHOR), Huang, Weixiang² (AUTHOR), Yuan, Juntang¹ (AUTHOR), Yin, Zengbin¹ (AUTHOR) zengbinyin@njust.edu.cn
Source:	Ceramics International. Aug2025:Part A, Vol. 51 Issue 19, p27961-27970. 10p.
Subject Terms:	KIRKENDALL effect, SURFACE diffusion, FREE surfaces, SINTERING, MICROSTRUCTURE, MICROWAVE sintering
Abstract:	WC-10Co cemented carbide were prepared by microwave sintering. The microwave sintering kinetics, grain growth mechanisms, microstructure and mechanical properties of WC-10Co were studied. The grain growth mechanisms of WC by microwave sintering are mainly diffusion reactions. The densification is dominated by lattice diffusion, surface diffusion and particle rearrangement in the stage of 1100–1200 °C. The mechanism of grain growth in the stage of 1300–1500 °C is mainly grain boundary diffusion, and the bonded phase on the free surface evaporates heavily with increasing temperature, which leads to a significant increase in the surface free energy and a decrease in the activation energy for grain growth (only 31.46 kJ/mol). This induces a change in the grain growth mechanism at the free surface from grain boundary diffusion to surface diffusion, which leads to a higher grain growth rate at the free surface than in the bulk. [ABSTRACT FROM AUTHOR]
Database:	Academic Search Index

Description
Abstract:	WC-10Co cemented carbide were prepared by microwave sintering. The microwave sintering kinetics, grain growth mechanisms, microstructure and mechanical properties of WC-10Co were studied. The grain growth mechanisms of WC by microwave sintering are mainly diffusion reactions. The densification is dominated by lattice diffusion, surface diffusion and particle rearrangement in the stage of 1100–1200 °C. The mechanism of grain growth in the stage of 1300–1500 °C is mainly grain boundary diffusion, and the bonded phase on the free surface evaporates heavily with increasing temperature, which leads to a significant increase in the surface free energy and a decrease in the activation energy for grain growth (only 31.46 kJ/mol). This induces a change in the grain growth mechanism at the free surface from grain boundary diffusion to surface diffusion, which leads to a higher grain growth rate at the free surface than in the bulk. [ABSTRACT FROM AUTHOR]
ISSN:	02728842
DOI:	10.1016/j.ceramint.2025.04.010