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Study of Ti/TiO2/Ti selector for the memristive crossbar array.

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Title: Study of Ti/TiO2/Ti selector for the memristive crossbar array.
Authors: Samsonova, A.1 (AUTHOR) alena.samsonova@skoltech.ru, Sukhomlin, D.1 (AUTHOR), Klimenko, O.1,2 (AUTHOR), Brilliantov, N.1 (AUTHOR), Antonov, V. N.1 (AUTHOR)
Source: Journal of Applied Physics. 6/14/2025, Vol. 137 Issue 22, p1-7. 7p.
Subject Terms: *OXYGEN vacancy, *MAGNETRON sputtering, *TITANIUM dioxide, *ELECTRON traps, *LOW voltage systems
Abstract: Selectors are non-linear elements used in memristor circuits. We explore a Ti / TiO 2 / Ti selector as part of a one-selector–one-resistor memristor for high-density crossbar arrays. The Ti / TiO 2 / Ti stack is fabricated using magnetron sputtering and e-gun thermal evaporation. Selectors fabricated via magnetron sputtering consistently exhibit non-linear behavior, with a non-linearity coefficient reaching 6.2 at a low operating voltage (0.5 V), stable performance at high current, and a fabrication compatible with the standard silicon technology. The observed non-linearity can be explained by the combination of electron trapping/detrapping with an excitation energy of ∼ 0.3 eV. In contrast, selectors fabricated using e-gun thermal evaporation have history-dependent voltage-controlled negative differential resistance. Later, their behavior evolves into a non-linear rectifying I – V curve. This phenomenon can be attributed to the evolution of the oxygen vacancies in TiO 2. [ABSTRACT FROM AUTHOR]
Database: Academic Search Index
Description
Abstract:Selectors are non-linear elements used in memristor circuits. We explore a Ti / TiO 2 / Ti selector as part of a one-selector–one-resistor memristor for high-density crossbar arrays. The Ti / TiO 2 / Ti stack is fabricated using magnetron sputtering and e-gun thermal evaporation. Selectors fabricated via magnetron sputtering consistently exhibit non-linear behavior, with a non-linearity coefficient reaching 6.2 at a low operating voltage (0.5 V), stable performance at high current, and a fabrication compatible with the standard silicon technology. The observed non-linearity can be explained by the combination of electron trapping/detrapping with an excitation energy of ∼ 0.3 eV. In contrast, selectors fabricated using e-gun thermal evaporation have history-dependent voltage-controlled negative differential resistance. Later, their behavior evolves into a non-linear rectifying I – V curve. This phenomenon can be attributed to the evolution of the oxygen vacancies in TiO 2. [ABSTRACT FROM AUTHOR]
ISSN:00218979
DOI:10.1063/5.0269515