Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing

The in‐memory computing paradigm aims at overcoming the intrinsic inefficiencies of Von‐Neumann computers by reducing the data‐transport per arithmetic operation. Crossbar arrays of multilevel memristive devices enable efficient calculations of matrix‐vector‐multiplications, an operation extensively...

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Bibliographic Details

Published in:	Advanced electronic materials Vol. 8; no. 10
Main Authors:	Stecconi, Tommaso, Guido, Roberto, Berchialla, Luca, La Porta, Antonio, Weiss, Jonas, Popoff, Youri, Halter, Mattia, Sousa, Marilyne, Horst, Folkert, Dávila, Diana, Drechsler, Ute, Dittmann, Regina, Offrein, Bert Jan, Bragaglia, Valeria
Format:	Journal Article
Language:	English
Published:	01.10.2022
Subjects:	analog memory artificial synapses HfO 2 resistive random‐access memory TaO x
ISSN:	2199-160X, 2199-160X
Online Access:	Get full text
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