Solution Growth and Performance Study of Cs2AgBiBr6 Single Crystal

Cs2AgBiBr6 high purity polycrystalline powders are synthesized by solution method. The millimeter‐sized Cs2AgBiBr6 crystals are obtained by cooling method with hydrobromic acid as solvent. Powder X‐Ray diffraction (XRD) analysis shows that the crystal is of cubic structure and its lattice constant i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Crystal research and technology (1979) Jg. 55; H. 3
Hauptverfasser: Su, Jing, Huang, Yi‐qiang, Chen, Han, Huang, Jing
Format: Journal Article
Sprache:Englisch
Veröffentlicht: 01.03.2020
Schlagworte:
Cs2AgBiBr6
morphology
optical properties
solution crystal growth
ISSN:0232-1300, 1521-4079
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Cs2AgBiBr6 high purity polycrystalline powders are synthesized by solution method. The millimeter‐sized Cs2AgBiBr6 crystals are obtained by cooling method with hydrobromic acid as solvent. Powder X‐Ray diffraction (XRD) analysis shows that the crystal is of cubic structure and its lattice constant is a=b=c=11.2562 Å. Optical absorption property is tested by ultraviolet‐visible (UV‐Vis) spectrophotometer. The results show that the absorption edge of the Cs2AgBiBr6 crystal is at about 593 nm and the band gap value is 2.12 eV. In addition, the thermogravimetric analysis/differential thermal analysis (TG/DTA) curves of Cs2AgBiBr6 crystal at 20–800 °C are measured. The thermal decomposition mechanism of Cs2AgBiBr6 crystal is analyzed. The results show that Cs2AgBiBr6 crystal with high quality can be prepared by solution method, and it has potential application advantages in the field of photoelectric devices. Millimeter‐sized Cs2AgBiBr6 crystals with high crystalline quality were grown using solution cooling method. Lattice parameters of the cubic crystal were estimated to be a=b=c=11.2562 Å. It shows a band gap of 2.12 eV, and begins to thermal decompose as the temperature increases to 400 °C, indicating the potential application for photoelectric devices.
ISSN:0232-1300
1521-4079
DOI:10.1002/crat.201900222