In Situ Atomic‐Scale Observation of Monolayer MoS2 Devices under High‐Voltage Biasing via Transmission Electron Microscopy

2D materials have great potential for not only device scaling but also various applications. To prompt the development of 2D electronics and optoelectronics, a better understanding of the limitation of materials is essential. Material failure caused by bias can lead to variations in device behavior...

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Vydané v:	Small (Weinheim an der Bergstrasse, Germany) Ročník 18; číslo 7; s. e2106411 - n/a
Hlavní autori:	Tseng, Yi‐Tang, Lu, Li‐Syuan, Shen, Fang‐Chun, Wang, Che‐Hung, Sung, Hsin‐Ya, Chang, Wen‐Hao, Wu, Wen‐Wei
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Weinheim Wiley Subscription Services, Inc 01.02.2022
Predmet:	2D materials Bias Depletion Disintegration Electrical faults Electron beams Electron irradiation Evolution high‐resolution TEM/STEM in situ biasing Joule heating Materials failure Molybdenum disulfide monolayer MoS 2 Monolayers Nanoclusters Nanotechnology Ohmic dissipation Optoelectronics Resistance heating Scanning transmission electron microscopy Thermal stress Transmission electron microscopy Two dimensional materials
ISSN:	1613-6810, 1613-6829, 1613-6829
On-line prístup:	Získať plný text
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