In Situ Atomic‐Scale Observation of Monolayer MoS2 Devices under High‐Voltage Biasing via Transmission Electron Microscopy

2D materials have great potential for not only device scaling but also various applications. To prompt the development of 2D electronics and optoelectronics, a better understanding of the limitation of materials is essential. Material failure caused by bias can lead to variations in device behavior...

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Vydané v:Small (Weinheim an der Bergstrasse, Germany) Ročník 18; číslo 7; s. e2106411 - n/a
Hlavní autori: Tseng, Yi‐Tang, Lu, Li‐Syuan, Shen, Fang‐Chun, Wang, Che‐Hung, Sung, Hsin‐Ya, Chang, Wen‐Hao, Wu, Wen‐Wei
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: Weinheim Wiley Subscription Services, Inc 01.02.2022
Predmet:
2D materials
Bias
Depletion
Disintegration
Electrical faults
Electron beams
Electron irradiation
Evolution
high‐resolution TEM/STEM
in situ biasing
Joule heating
Materials failure
Molybdenum disulfide
monolayer MoS 2
Monolayers
Nanoclusters
Nanotechnology
Ohmic dissipation
Optoelectronics
Resistance heating
Scanning transmission electron microscopy
Thermal stress
Transmission electron microscopy
Two dimensional materials
ISSN:1613-6810, 1613-6829, 1613-6829
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Abstract 2D materials have great potential for not only device scaling but also various applications. To prompt the development of 2D electronics and optoelectronics, a better understanding of the limitation of materials is essential. Material failure caused by bias can lead to variations in device behavior and even electrical breakdown. In this study, the structural evolution of monolayer MoS2 with high bias is revealed via in situ transmission electron microscopy at the atomic scale. The biasing process is recorded and studied with the aid of aberration‐corrected scanning transmission electron microscopy. The effects of electron beam irradiation and biasing are also discussed through the combination of experiments and theory. It is found that the Mo nanoclusters result from disintegration of MoS2 and sulfur depletion, which are induced by Joule heating. The thermal stress can also damage the MoS2 layer and form long cracks in both in situ and ex situ biasing cases. Investigation of the results obtained with different applied voltages helps to further verify the mechanism of evolution and provide a comprehensive study of the function of biasing. The high‐voltage biasing of monolayer MoS2 devices is demonstrated through in situ TEM and aberration‐corrected STEM to explore the mechanism of the material failure. During in situ TEM biasing, the MoS2 device is damaged by knock‐on damage, and the atomic migration induced by Joule heating. Also, long cracks formed by thermal stress are discussed in this research.
AbstractList 2D materials have great potential for not only device scaling but also various applications. To prompt the development of 2D electronics and optoelectronics, a better understanding of the limitation of materials is essential. Material failure caused by bias can lead to variations in device behavior and even electrical breakdown. In this study, the structural evolution of monolayer MoS2 with high bias is revealed via in situ transmission electron microscopy at the atomic scale. The biasing process is recorded and studied with the aid of aberration‐corrected scanning transmission electron microscopy. The effects of electron beam irradiation and biasing are also discussed through the combination of experiments and theory. It is found that the Mo nanoclusters result from disintegration of MoS2 and sulfur depletion, which are induced by Joule heating. The thermal stress can also damage the MoS2 layer and form long cracks in both in situ and ex situ biasing cases. Investigation of the results obtained with different applied voltages helps to further verify the mechanism of evolution and provide a comprehensive study of the function of biasing. The high‐voltage biasing of monolayer MoS2 devices is demonstrated through in situ TEM and aberration‐corrected STEM to explore the mechanism of the material failure. During in situ TEM biasing, the MoS2 device is damaged by knock‐on damage, and the atomic migration induced by Joule heating. Also, long cracks formed by thermal stress are discussed in this research.
2D materials have great potential for not only device scaling but also various applications. To prompt the development of 2D electronics and optoelectronics, a better understanding of the limitation of materials is essential. Material failure caused by bias can lead to variations in device behavior and even electrical breakdown. In this study, the structural evolution of monolayer MoS2 with high bias is revealed via in situ transmission electron microscopy at the atomic scale. The biasing process is recorded and studied with the aid of aberration‐corrected scanning transmission electron microscopy. The effects of electron beam irradiation and biasing are also discussed through the combination of experiments and theory. It is found that the Mo nanoclusters result from disintegration of MoS2 and sulfur depletion, which are induced by Joule heating. The thermal stress can also damage the MoS2 layer and form long cracks in both in situ and ex situ biasing cases. Investigation of the results obtained with different applied voltages helps to further verify the mechanism of evolution and provide a comprehensive study of the function of biasing.
2D materials have great potential for not only device scaling but also various applications. To prompt the development of 2D electronics and optoelectronics, a better understanding of the limitation of materials is essential. Material failure caused by bias can lead to variations in device behavior and even electrical breakdown. In this study, the structural evolution of monolayer MoS2 with high bias is revealed via in situ transmission electron microscopy at the atomic scale. The biasing process is recorded and studied with the aid of aberration-corrected scanning transmission electron microscopy. The effects of electron beam irradiation and biasing are also discussed through the combination of experiments and theory. It is found that the Mo nanoclusters result from disintegration of MoS2 and sulfur depletion, which are induced by Joule heating. The thermal stress can also damage the MoS2 layer and form long cracks in both in situ and ex situ biasing cases. Investigation of the results obtained with different applied voltages helps to further verify the mechanism of evolution and provide a comprehensive study of the function of biasing.2D materials have great potential for not only device scaling but also various applications. To prompt the development of 2D electronics and optoelectronics, a better understanding of the limitation of materials is essential. Material failure caused by bias can lead to variations in device behavior and even electrical breakdown. In this study, the structural evolution of monolayer MoS2 with high bias is revealed via in situ transmission electron microscopy at the atomic scale. The biasing process is recorded and studied with the aid of aberration-corrected scanning transmission electron microscopy. The effects of electron beam irradiation and biasing are also discussed through the combination of experiments and theory. It is found that the Mo nanoclusters result from disintegration of MoS2 and sulfur depletion, which are induced by Joule heating. The thermal stress can also damage the MoS2 layer and form long cracks in both in situ and ex situ biasing cases. Investigation of the results obtained with different applied voltages helps to further verify the mechanism of evolution and provide a comprehensive study of the function of biasing.
Author Tseng, Yi‐Tang
Wang, Che‐Hung
Shen, Fang‐Chun
Lu, Li‐Syuan
Wu, Wen‐Wei
Chang, Wen‐Hao
Sung, Hsin‐Ya
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  organization: National Yang Ming Chiao Tung University
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References 2017; 7
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References_xml – volume: 48
  start-page: 560
  year: 2018
  publication-title: Nano Energy
– volume: 109
  year: 2012
  publication-title: Phys. Rev. Lett.
– volume: 3
  start-page: 9
  year: 2019
  publication-title: npj 2D Mater. Appl.
– volume: 27
  start-page: 8
  year: 2019
  publication-title: Mater. Today
– volume: 14
  start-page: 1569
  year: 2020
  publication-title: ACS Nano
– volume: 29
  year: 2017
  publication-title: Adv. Mater.
– volume: 9
  year: 2015
  publication-title: ACS Nano
– volume: 17
  start-page: 5502
  year: 2017
  publication-title: Nano Lett.
– volume: 4
  start-page: 1776
  year: 2013
  publication-title: Nat. Commun.
– volume: 124
  year: 2020
  publication-title: J. Phys. Chem. C
– volume: 14
  year: 2018
  publication-title: Small
– volume: 8
  start-page: 497
  year: 2013
  publication-title: Nat. Nanotechnol.
– volume: 12
  start-page: 7109
  year: 2018
  publication-title: ACS Nano
– volume: 7
  year: 2016
  publication-title: Nat. Commun.
– volume: 10
  start-page: 403
  year: 2015
  publication-title: Nat. Nanotechnol.
– volume: 7
  year: 2017
  publication-title: Sci. Rep.
– volume: 24
  start-page: 2320
  year: 2012
  publication-title: Adv. Mater.
– volume: 12
  start-page: 693
  year: 2021
  publication-title: Nat. Commun.
– volume: 6
  year: 2014
  publication-title: Nanoscale
– volume: 8
  start-page: 3992
  year: 2014
  publication-title: ACS Nano
– volume: 12
  start-page: 7721
  year: 2018
  publication-title: ACS Nano
– volume: 6
  start-page: 147
  year: 2011
  publication-title: Nat. Nanotechnol.
– volume: 11
  year: 2019
  publication-title: ACS Appl. Mater. Interfaces
– volume: 15
  start-page: 5214
  year: 2015
  publication-title: Nano Lett.
– volume: 11
  start-page: 9435
  year: 2017
  publication-title: ACS Nano
– volume: 8
  year: 2017
  publication-title: Nat. Commun.
– volume: 6
  year: 2019
  publication-title: 2D Mater.
– volume: 13
  start-page: 3196
  year: 2019
  publication-title: ACS Nano
– volume: 13
  start-page: 9638
  year: 2019
  publication-title: ACS Nano
– volume: 16
  year: 2020
  publication-title: Small
– volume: 30
  year: 2020
  publication-title: Adv. Funct. Mater.
– volume: 321
  start-page: 1066
  year: 2008
  publication-title: Science
– volume: 8
  year: 2016
  publication-title: ACS Appl. Mater. Interfaces
– volume: 10
  start-page: 9831
  year: 2016
  publication-title: ACS Nano
– volume: 7
  start-page: 7931
  year: 2013
  publication-title: ACS Nano
– volume: 32
  year: 2020
  publication-title: Adv. Mater.
– volume: 31
  year: 2021
  publication-title: Adv. Funct. Mater.
– volume: 13
  start-page: 3626
  year: 2013
  publication-title: Nano Lett.
– volume: 9
  start-page: 2051
  year: 2018
  publication-title: Nat. Commun.
– volume: 6
  year: 2016
  publication-title: Sci. Rep.
– volume: 13
  start-page: 7117
  year: 2019
  publication-title: ACS Nano
– volume: 9
  start-page: 3663
  year: 2016
  publication-title: Nano Res.
– volume: 554
  start-page: 500
  year: 2018
  publication-title: Nature
– volume: 6
  year: 2012
  publication-title: ACS Nano
– volume: 13
  year: 2017
  publication-title: Small
– volume: 146
  start-page: 33
  year: 2014
  publication-title: Ultramicroscopy
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Snippet 2D materials have great potential for not only device scaling but also various applications. To prompt the development of 2D electronics and optoelectronics, a...
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SubjectTerms 2D materials
Bias
Depletion
Disintegration
Electrical faults
Electron beams
Electron irradiation
Evolution
high‐resolution TEM/STEM
in situ biasing
Joule heating
Materials failure
Molybdenum disulfide
monolayer MoS 2
Monolayers
Nanoclusters
Nanotechnology
Ohmic dissipation
Optoelectronics
Resistance heating
Scanning transmission electron microscopy
Thermal stress
Transmission electron microscopy
Two dimensional materials
Title In Situ Atomic‐Scale Observation of Monolayer MoS2 Devices under High‐Voltage Biasing via Transmission Electron Microscopy
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