Tseng, Y., Lu, L., Shen, F., Wang, C., Sung, H., Chang, W., & Wu, W. (2022). In Situ Atomic‐Scale Observation of Monolayer MoS2 Devices under High‐Voltage Biasing via Transmission Electron Microscopy. Small (Weinheim an der Bergstrasse, Germany), 18(7), e2106411-n/a. https://doi.org/10.1002/smll.202106411
Citácia podle Chicago (17th ed.)Tseng, Yi‐Tang, Li‐Syuan Lu, Fang‐Chun Shen, Che‐Hung Wang, Hsin‐Ya Sung, Wen‐Hao Chang, a Wen‐Wei Wu. "In Situ Atomic‐Scale Observation of Monolayer MoS2 Devices Under High‐Voltage Biasing via Transmission Electron Microscopy." Small (Weinheim an Der Bergstrasse, Germany) 18, no. 7 (2022): e2106411-n/a. https://doi.org/10.1002/smll.202106411.
Citácia podľa MLA (8th ed.)Tseng, Yi‐Tang, et al. "In Situ Atomic‐Scale Observation of Monolayer MoS2 Devices Under High‐Voltage Biasing via Transmission Electron Microscopy." Small (Weinheim an Der Bergstrasse, Germany), vol. 18, no. 7, 2022, pp. e2106411-n/a, https://doi.org/10.1002/smll.202106411.