Wafer‐Scale Epitaxial Growth of the Thickness‐Controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications

To harness the intriguing properties of 2D van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, the epitaxial growth of single‐crystalline 1T‐CrTe2 thin films on 2‐inch sapphire substrates a...

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Vydáno v:Advanced functional materials Ročník 33; číslo 50
Hlavní autoři: Liu, Xinqi, Huang, Puyang, Xia, Yunyouyou, Gao, Lei, Liao, Liyang, Cui, Baoshan, Backes, Dirk, Laan, Gerrit, Hesjedal, Thorsten, Ji, Yuchen, Chen, Peng, Zhang, Yifan, Wu, Fan, Wang, Meixiao, Zhang, Junwei, Yu, Guoqiang, Song, Cheng, Chen, Yulin, Liu, Zhongkai, Yang, Yumeng, Peng, Yong, Li, Gang, Yao, Qi, Kou, Xufeng
Médium: Journal Article
Jazyk:angličtina
Vydáno: Hoboken Wiley Subscription Services, Inc 08.12.2023
Témata:
2D ferromagnets
Aluminum oxide
Controllability
Epitaxial growth
Ferromagnetism
Flexible manufacturing systems
interface engineering
Magnetic properties
Materials science
Sapphire
Spintronics
spin‐orbit torque switches
Substrates
Surface energy
Thickness
Thin films
van der Waals heterostructures
wafer‐scale epitaxial growth
ISSN:1616-301X, 1616-3028
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Shrnutí:To harness the intriguing properties of 2D van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, the epitaxial growth of single‐crystalline 1T‐CrTe2 thin films on 2‐inch sapphire substrates are demonstrated. Benefiting from the uniform surface energy of the dangling bond‐free Al2O3(0001) surface, the layer‐by‐layer vdW growth mode is observed right from the initial growth stage, which warrants precise control of the sample thickness beyond three monolayer and homogeneous surface morphology across the entire wafer. Moreover, the presence of the Coulomb interaction at the CrTe2/Al2O3 interface plays an important role in tailoring the anomalous Hall response, and the structural optimization of the CrTe2‐based spin‐orbit torque device leads to a substantial switching power reduction by 54%. The results may lay out a general framework for the design of energy‐efficient spintronics based on configurable vdW FMs. Molecular beam epitaxy is used to realize the wafer‐scale growth of uniform 1T‐CrTe2 films and establish the van der Waals integration of Bi2Te3/CrTe2 heterostructures. Endorsed by the intrinsic perpendicular magnetic anisotropy and strong spin‐orbit coupling, the Bi2Te3/CrTe2‐based crossbar array is fabricated to achieve reliable spin‐orbit torque‐driven magnetization switching, hence laying out a solid framework for energy‐efficient spintronic applications.
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ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.202304454