AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f{sub max} as high as 100 GHz

The N-Al{sub 0.27}Ga{sub 0.73}N/GaN High Electron Mobility Transistors (HEMTs) with different gate lengths L{sub g} (ranging from 170 nm to 0.5 {mu}m) and gate widths W{sub s} (ranging from 100 to 1200 {mu}m) have been studied. The S parameters have been measured; these parameters have been used to...

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Vydané v:	Semiconductors (Woodbury, N.Y.) Ročník 43; číslo 4
Hlavní autori:	Mokerov, V. G., Kuznetsov, A. L., Fedorov, Yu. V., Bugaev, A. S., Pavlov, A. Yu, Enyushkina, E. N., Gnatyuk, D. L., Zuev, A. V., Galiev, R. R., Ovcharenko, E. N., Sveshnikov, Yu. N., Tsatsulnikov, A. F., Ustinov, V. M.
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	United States 15.04.2009
Predmet:	BREAKDOWN ELECTRIC POTENTIAL ELECTRON MOBILITY GALLIUM NITRIDES GHZ RANGE 01-100 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY MHZ RANGE 01-100 MHZ RANGE 100-1000 TRANSISTORS
ISSN:	1063-7826, 1090-6479
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