Bi‐Deficiency Leading to High‐Performance in Mg3(Sb,Bi)2‐Based Thermoelectric Materials

Mg3(Sb,Bi)2 is a potential nearly‐room temperature thermoelectric compound composed of earth‐abundant elements. However, complex defect tuning and exceptional microstructural control are required. Prior studies have confirmed the detrimental effect of Mg vacancies (VMg) in Mg3(Sb,Bi)2. This study pr...

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Vydáno v:	Advanced Materials Ročník 35; číslo 23; s. e2209119 - n/a
Hlavní autoři:	Li, Jing‐Wei, Liu, Weishu, Xu, Wei, Zhuang, Hua‐Lu, Han, Zhijia, Jiang, Feng, Zhang, Peng, Hu, Haihua, Gao, Hanbin, Jiang, Yilin, Cai, Bowen, Pei, Jun, Su, Bin, Li, Qian, Hayashi, Kei, Li, Hezhang, Miyazaki, Yuzuru, Cao, Xingzhong, Zheng, Qiang, Li, Jing‐Feng
Médium:	Journal Article
Jazyk:	angličtina japonština
Vydáno:	Weinheim Wiley 01.06.2023 Wiley Subscription Services, Inc
Témata:	Antimony Bismuth defect engineering Defects lattice thermal conductivity Mg3(Sb,Bi)2 Positron annihilation Room temperature Scanning transmission electron microscopy Scattering Thermoelectric materials Transport properties Tuning
ISSN:	0935-9648, 1521-4095, 1521-4095
On-line přístup:	Získat plný text
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