Broadband MoS2 Field‐Effect Phototransistors: Ultrasensitive Visible‐Light Photoresponse and Negative Infrared Photoresponse

Inverse photoresponse is discovered from phototransistors based on molybdenum disulfide (MoS2). The devices are capable of detecting photons with energy below the bandgap of MoS2. Under the illumination of near‐infrared (NIR) light at 980 and 1550 nm, negative photoresponses with short response time...

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Vydáno v:	Advanced materials (Weinheim) Ročník 30; číslo 7
Hlavní autoři:	Wu, Jing‐Yuan, Chun, Young Tea, Li, Shunpu, Zhang, Tong, Wang, Junzhan, Shrestha, Pawan Kumar, Chu, Daping
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Weinheim Wiley Subscription Services, Inc 15.02.2018
Témata:	Bolometers bolometric effect Broadband Crystal lattices Electrical measurement Energy gap Illumination Infrared radiation inverse photoresponse Layered materials Light Materials science Molybdenum disulfide Optical communication Optoelectronic devices Photoelectric effect Photoelectric emission Photons Phototransistors Response time sub‐bandgap photodetector Thermal energy ultrahigh photoresponsivity
ISSN:	0935-9648, 1521-4095, 1521-4095
On-line přístup:	Získat plný text
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