Highly Sensitive Detection of Polarized Light Using Anisotropic 2D ReS2

Due to the novel optical and optoelectronic properties, 2D materials have received increasing interests for optoelectronics applications. Discovering new properties and functionalities of 2D materials is challenging yet promising. Here broadband polarization sensitive photodetectors based on few lay...

Celý popis

Uloženo v:
Podrobná bibliografie
Vydáno v:Advanced functional materials Ročník 26; číslo 8; s. 1169 - 1177
Hlavní autoři: Liu, Fucai, Zheng, Shoujun, He, Xuexia, Chaturvedi, Apoorva, He, Junfeng, Chow, Wai Leong, Mion, Thomas R., Wang, Xingli, Zhou, Jiadong, Fu, Qundong, Fan, Hong Jin, Tay, Beng Kang, Song, Li, He, Rui-Hua, Kloc, Christian, Ajayan, Pulickel M., Liu, Zheng
Médium: Journal Article
Jazyk:angličtina
Vydáno: Blackwell Publishing Ltd 23.02.2016
Témata:
2D materials
anisotropy
linear dichroism
photoresponse
ReS2
ISSN:1616-301X, 1616-3028
On-line přístup:Získat plný text
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
Popis
Shrnutí:Due to the novel optical and optoelectronic properties, 2D materials have received increasing interests for optoelectronics applications. Discovering new properties and functionalities of 2D materials is challenging yet promising. Here broadband polarization sensitive photodetectors based on few layer ReS2 are demonstrated. The transistor based on few layer ReS2 shows an n‐type behavior with the mobility of about 40 cm2 V−1 s−1 and on/off ratio of 105. The polarization dependence of photoresponse is ascribed to the unique anisotropic in‐plane crystal structure, consistent with the optical absorption anisotropy. The linear dichroic photodetection with a high photoresponsivity reported here demonstrates a route to exploit the intrinsic anisotropy of 2D materials and the possibility to open up new ways for the applications of 2D materials for light polarization detection. Polarization sensitive photodetectors are demonstrated based on anisotropic few‐layer ReS2. The transistor based on few layer ReS2 shows an n‐type behavior with a mobility of about 40 cm2 V−1 s−1 and photoresponsivity of about 103 A W−1. The polarization dependence of photoresponse is ascribed to the unique anisotropic structure. The result demonstrates a route to exploit the intrinsic anisotropy of 2D materials and the possibility to open up new ways of the applications of 2D materials for light polarization detection.
Bibliografie:ark:/67375/WNG-QC2RW5GQ-H
ArticleID:ADFM201504546
istex:F579B48C298E90B8C240E9D76AA059CEA72992CE
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201504546