Highly Sensitive Detection of Polarized Light Using Anisotropic 2D ReS2
Due to the novel optical and optoelectronic properties, 2D materials have received increasing interests for optoelectronics applications. Discovering new properties and functionalities of 2D materials is challenging yet promising. Here broadband polarization sensitive photodetectors based on few lay...
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| Vydáno v: | Advanced functional materials Ročník 26; číslo 8; s. 1169 - 1177 |
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| Médium: | Journal Article |
| Jazyk: | angličtina |
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Blackwell Publishing Ltd
23.02.2016
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| ISSN: | 1616-301X, 1616-3028 |
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| Abstract | Due to the novel optical and optoelectronic properties, 2D materials have received increasing interests for optoelectronics applications. Discovering new properties and functionalities of 2D materials is challenging yet promising. Here broadband polarization sensitive photodetectors based on few layer ReS2 are demonstrated. The transistor based on few layer ReS2 shows an n‐type behavior with the mobility of about 40 cm2 V−1 s−1 and on/off ratio of 105. The polarization dependence of photoresponse is ascribed to the unique anisotropic in‐plane crystal structure, consistent with the optical absorption anisotropy. The linear dichroic photodetection with a high photoresponsivity reported here demonstrates a route to exploit the intrinsic anisotropy of 2D materials and the possibility to open up new ways for the applications of 2D materials for light polarization detection.
Polarization sensitive photodetectors are demonstrated based on anisotropic few‐layer ReS2. The transistor based on few layer ReS2 shows an n‐type behavior with a mobility of about 40 cm2 V−1 s−1 and photoresponsivity of about 103 A W−1. The polarization dependence of photoresponse is ascribed to the unique anisotropic structure. The result demonstrates a route to exploit the intrinsic anisotropy of 2D materials and the possibility to open up new ways of the applications of 2D materials for light polarization detection. |
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| AbstractList | Due to the novel optical and optoelectronic properties, 2D materials have received increasing interests for optoelectronics applications. Discovering new properties and functionalities of 2D materials is challenging yet promising. Here broadband polarization sensitive photodetectors based on few layer ReS2 are demonstrated. The transistor based on few layer ReS2 shows an n‐type behavior with the mobility of about 40 cm2 V−1 s−1 and on/off ratio of 105. The polarization dependence of photoresponse is ascribed to the unique anisotropic in‐plane crystal structure, consistent with the optical absorption anisotropy. The linear dichroic photodetection with a high photoresponsivity reported here demonstrates a route to exploit the intrinsic anisotropy of 2D materials and the possibility to open up new ways for the applications of 2D materials for light polarization detection.
Polarization sensitive photodetectors are demonstrated based on anisotropic few‐layer ReS2. The transistor based on few layer ReS2 shows an n‐type behavior with a mobility of about 40 cm2 V−1 s−1 and photoresponsivity of about 103 A W−1. The polarization dependence of photoresponse is ascribed to the unique anisotropic structure. The result demonstrates a route to exploit the intrinsic anisotropy of 2D materials and the possibility to open up new ways of the applications of 2D materials for light polarization detection. |
| Author | Wang, Xingli Zhou, Jiadong Tay, Beng Kang Chaturvedi, Apoorva Ajayan, Pulickel M. Kloc, Christian He, Rui-Hua He, Junfeng Song, Li Chow, Wai Leong Mion, Thomas R. He, Xuexia Fu, Qundong Liu, Fucai Zheng, Shoujun Fan, Hong Jin Liu, Zheng |
| Author_xml | – sequence: 1 givenname: Fucai surname: Liu fullname: Liu, Fucai organization: School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore, Singapore – sequence: 2 givenname: Shoujun surname: Zheng fullname: Zheng, Shoujun organization: Centre for Disruptive Photonic Technologies, School of Physics and Mathematics Sciences, Nanyang Technological University, 637371, Singapore, Singapore – sequence: 3 givenname: Xuexia surname: He fullname: He, Xuexia email: xxhe@ntu.edu.sg organization: School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore, Singapore – sequence: 4 givenname: Apoorva surname: Chaturvedi fullname: Chaturvedi, Apoorva organization: School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore, Singapore – sequence: 5 givenname: Junfeng surname: He fullname: He, Junfeng organization: Department of Physics, Boston College, MA, 02467, Chestnut Hill, USA – sequence: 6 givenname: Wai Leong surname: Chow fullname: Chow, Wai Leong organization: NOVITAS, Centre for Micro-/Nano-electronics School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore – sequence: 7 givenname: Thomas R. surname: Mion fullname: Mion, Thomas R. organization: Department of Physics, Boston College, MA, 02467, Chestnut Hill, USA – sequence: 8 givenname: Xingli surname: Wang fullname: Wang, Xingli organization: NOVITAS, Centre for Micro-/Nano-electronics School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore – sequence: 9 givenname: Jiadong surname: Zhou fullname: Zhou, Jiadong organization: School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore, Singapore – sequence: 10 givenname: Qundong surname: Fu fullname: Fu, Qundong organization: School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore, Singapore – sequence: 11 givenname: Hong Jin surname: Fan fullname: Fan, Hong Jin organization: Centre for Disruptive Photonic Technologies, School of Physics and Mathematics Sciences, Nanyang Technological University, 637371, Singapore, Singapore – sequence: 12 givenname: Beng Kang surname: Tay fullname: Tay, Beng Kang organization: NOVITAS, Centre for Micro-/Nano-electronics School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore – sequence: 13 givenname: Li surname: Song fullname: Song, Li organization: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Anhui, 230026, Hefei, P. R. China – sequence: 14 givenname: Rui-Hua surname: He fullname: He, Rui-Hua organization: Department of Physics, Boston College, MA, 02467, Chestnut Hill, USA – sequence: 15 givenname: Christian surname: Kloc fullname: Kloc, Christian organization: School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore, Singapore – sequence: 16 givenname: Pulickel M. surname: Ajayan fullname: Ajayan, Pulickel M. organization: Department of Materials Science and Nanoengineering, Rice University, TX, 77005, Houston, USA – sequence: 17 givenname: Zheng surname: Liu fullname: Liu, Zheng email: xxhe@ntu.edu.sg organization: NOVITAS, Centre for Micro-/Nano-electronics School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore |
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| Title | Highly Sensitive Detection of Polarized Light Using Anisotropic 2D ReS2 |
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