Simulation of light-illuminated STM measurements

A three dimensional simulation system for light-illuminated STM measurements is proposed for the first time combining semiconductor process and device simulators with an FDTD solver. Photo-generation rates estimated from light intensity obtained from the FDTD solver are incorporated into a semicondu...

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Vydáno v:International Conference on Simulation of Semiconductor Processes and Devices s. 129 - 132
Hlavní autoři: Fukuda, Koichi, Nishizawa, Masayasu, Tada, Tetsuya, Bolotov, Leonid, Suzuki, Kaina, Sato, Shigeo, Arimoto, Hiroshi, Kanayama, Toshihiko
Médium: Konferenční příspěvek
Jazyk:angličtina
japonština
Vydáno: IEEE 01.09.2014
Témata:
Current measurement
Finite difference methods
finite-difference time-domain FDTD
light-illuminated STM
Probes
scanning tunneling microscopy STM
Semiconductor device measurement
semiconductor device simulation
Semiconductor process modeling
Time-domain analysis
Tunneling
tunneling currents
ISBN:1479952877, 9781479952878
ISSN:1946-1569
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Popis
Shrnutí:A three dimensional simulation system for light-illuminated STM measurements is proposed for the first time combining semiconductor process and device simulators with an FDTD solver. Photo-generation rates estimated from light intensity obtained from the FDTD solver are incorporated into a semiconductor device simulation of a device structure including a semiconductor sample and an STM probe tip. Tunneling currents between the STM probe and the sample are solved consistently with current continuity equations in the semiconductor sample. The usefulness of the proposed method is demonstrated through a case of UV-laser-illuminated STM measurement of a silicon nanowire.
ISBN:1479952877
9781479952878
ISSN:1946-1569
DOI:10.1109/SISPAD.2014.6931580