Simulation of light-illuminated STM measurements

A three dimensional simulation system for light-illuminated STM measurements is proposed for the first time combining semiconductor process and device simulators with an FDTD solver. Photo-generation rates estimated from light intensity obtained from the FDTD solver are incorporated into a semicondu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:International Conference on Simulation of Semiconductor Processes and Devices S. 129 - 132
Hauptverfasser: Fukuda, Koichi, Nishizawa, Masayasu, Tada, Tetsuya, Bolotov, Leonid, Suzuki, Kaina, Sato, Shigeo, Arimoto, Hiroshi, Kanayama, Toshihiko
Format: Tagungsbericht
Sprache:Englisch
Japanisch
Veröffentlicht: IEEE 01.09.2014
Schlagworte:
Current measurement
Finite difference methods
finite-difference time-domain FDTD
light-illuminated STM
Probes
scanning tunneling microscopy STM
Semiconductor device measurement
semiconductor device simulation
Semiconductor process modeling
Time-domain analysis
Tunneling
tunneling currents
ISBN:1479952877, 9781479952878
ISSN:1946-1569
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Abstract A three dimensional simulation system for light-illuminated STM measurements is proposed for the first time combining semiconductor process and device simulators with an FDTD solver. Photo-generation rates estimated from light intensity obtained from the FDTD solver are incorporated into a semiconductor device simulation of a device structure including a semiconductor sample and an STM probe tip. Tunneling currents between the STM probe and the sample are solved consistently with current continuity equations in the semiconductor sample. The usefulness of the proposed method is demonstrated through a case of UV-laser-illuminated STM measurement of a silicon nanowire.
AbstractList A three dimensional simulation system for light-illuminated STM measurements is proposed for the first time combining semiconductor process and device simulators with an FDTD solver. Photo-generation rates estimated from light intensity obtained from the FDTD solver are incorporated into a semiconductor device simulation of a device structure including a semiconductor sample and an STM probe tip. Tunneling currents between the STM probe and the sample are solved consistently with current continuity equations in the semiconductor sample. The usefulness of the proposed method is demonstrated through a case of UV-laser-illuminated STM measurement of a silicon nanowire.
Author Sato, Shigeo
Tada, Tetsuya
Fukuda, Koichi
Nishizawa, Masayasu
Kanayama, Toshihiko
Suzuki, Kaina
Arimoto, Hiroshi
Bolotov, Leonid
Author_xml – sequence: 1
  givenname: Koichi
  surname: Fukuda
  fullname: Fukuda, Koichi
  organization: Nanoelectron. Res. Inst. (NERI), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
– sequence: 2
  givenname: Masayasu
  surname: Nishizawa
  fullname: Nishizawa, Masayasu
  organization: Nanoelectron. Res. Inst. (NERI), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
– sequence: 3
  givenname: Tetsuya
  surname: Tada
  fullname: Tada, Tetsuya
  organization: Nanoelectron. Res. Inst. (NERI), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
– sequence: 4
  givenname: Leonid
  surname: Bolotov
  fullname: Bolotov, Leonid
  organization: Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba, Japan
– sequence: 5
  givenname: Kaina
  surname: Suzuki
  fullname: Suzuki, Kaina
  organization: Fujitsu Semicond. Ltd., Tokyo, Japan
– sequence: 6
  givenname: Shigeo
  surname: Sato
  fullname: Sato, Shigeo
  organization: Fujitsu Semicond. Ltd., Tokyo, Japan
– sequence: 7
  givenname: Hiroshi
  surname: Arimoto
  fullname: Arimoto, Hiroshi
  organization: Nanoelectron. Res. Inst. (NERI), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
– sequence: 8
  givenname: Toshihiko
  surname: Kanayama
  fullname: Kanayama, Toshihiko
  organization: Nanoelectron. Res. Inst. (NERI), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
BookMark eNo1j8tKw0AUQK9YwbbmC7rJDyTeO-9Zlqq1UFFIXZchvaMjeUiSLvx7F9bV4WwOnAXMur5jgBVhSYT-vtpVb-uHUiCp0nhJ2uEVZN46UtZ7LZzT17D4F2tnMCevTEHa-FvIxvELEUk4I6ybA1apPTdhSn2X9zFv0sfnVKSmObepCxOf8urwkrccxvPALXfTeAc3MTQjZxcu4f3p8bB5Lvav291mvS-SsDgVLKTTQWnDSta1UkpIG2vUitg6qUgI1j7aEwYyzlD0FC2hIG-8lipGuYTVXzcx8_F7SG0Yfo6XYfkL4jhHkQ
ContentType Conference Proceeding
DBID 6IE
6IL
CBEJK
RIE
RIL
DOI 10.1109/SISPAD.2014.6931580
DatabaseName IEEE Electronic Library (IEL) Conference Proceedings
IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume
IEEE Xplore All Conference Proceedings
IEEE Electronic Library (IEL)
IEEE Proceedings Order Plans (POP All) 1998-Present
DatabaseTitleList
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE/IET Electronic Library
  url: https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISBN 9781479952885
1479952885
9781479952854
1479952850
EndPage 132
ExternalDocumentID 6931580
Genre orig-research
GroupedDBID 6IE
6IF
6IH
6IK
6IL
6IN
AAJGR
AAWTH
ABLEC
ADZIZ
ALMA_UNASSIGNED_HOLDINGS
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CBEJK
CHZPO
IEGSK
IPLJI
OCL
RIE
RIL
RNS
ID FETCH-LOGICAL-i270t-e2385a456e43cc444237fc0541e7834122e59f7d0a16861f91f71021969534ff3
IEDL.DBID RIE
ISBN 1479952877
9781479952878
ISICitedReferencesCount 0
ISICitedReferencesURI http://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=Summon&SrcAuth=ProQuest&DestLinkType=CitingArticles&DestApp=WOS_CPL&KeyUT=000364919800033&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D
ISSN 1946-1569
IngestDate Wed Aug 27 04:29:32 EDT 2025
IsPeerReviewed false
IsScholarly true
Language English
Japanese
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-i270t-e2385a456e43cc444237fc0541e7834122e59f7d0a16861f91f71021969534ff3
PageCount 4
ParticipantIDs ieee_primary_6931580
PublicationCentury 2000
PublicationDate 2014-09-01
PublicationDateYYYYMMDD 2014-09-01
PublicationDate_xml – month: 09
  year: 2014
  text: 2014-09-01
  day: 01
PublicationDecade 2010
PublicationTitle International Conference on Simulation of Semiconductor Processes and Devices
PublicationTitleAbbrev SISPAD
PublicationYear 2014
Publisher IEEE
Publisher_xml – name: IEEE
SSID ssj0001286278
Score 1.8830079
Snippet A three dimensional simulation system for light-illuminated STM measurements is proposed for the first time combining semiconductor process and device...
SourceID ieee
SourceType Publisher
StartPage 129
SubjectTerms Current measurement
Finite difference methods
finite-difference time-domain FDTD
light-illuminated STM
Probes
scanning tunneling microscopy STM
Semiconductor device measurement
semiconductor device simulation
Semiconductor process modeling
Time-domain analysis
Tunneling
tunneling currents
Title Simulation of light-illuminated STM measurements
URI https://ieeexplore.ieee.org/document/6931580
WOSCitedRecordID wos000364919800033&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV09T8MwED2VigEWPlrEtzIw4jaOndgeEVCBBFWlFNStSp2zFImmqB_8fmwntEViYXO8OI4l33uXu_cAbjDBjMXCEBFJTTjjSCZMxcTQLA8NM6rS2X5_Ef2-HI3UoAG3614YRPTFZ9hxQ_8vP5_plUuVdRPFaCwtQd8RQlS9Wlv5FIvN_cVraXlCLC1Rvo_LCZ5ZViB-5J3qZ1krENFQddPndHD34Mq8eKde4pfXig81vYP_veQhtDc9e8FgHY2OoIHlMexvyQ22IEyLae3WFcxM8OE1RApndVyUFnLmQTp8DaabpOGiDW-9x-H9E6kdE0gRiXBJ0AbgOLOYCDnTmnNX82K0RWUUnaEGjSKMlRF5mNFEJtQoahzCcBI5MePGsBNolrMSTyHwRIRF0qDlrUZIZa8CEXOdsdyEOZ2cQcvtffxZiWKM622f_z19AXvu81bFWZfQXM5XeAW7-mtZLObX_iS_ARcJlnA
linkProvider IEEE
linkToHtml http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1dT8IwFL0haqK--AHGb_fgo4V1bdf10agEIhAS0PBGxnabLJFh-PD323YTMPHFt64vXdek95y7e88BuMcQYyakJjKIEsIZRzJhShBN49TXTKtCZ_u9I3u9aDRS_Qo8rHthENEVn2HdDt2__HSWrGyqrBEqRkVkCPqu4DygRbfWVkbFoHN39RpiHhJDTJTr5LKSZ4YXyB-Bp_I5KjWIqK8ag_ag__hsC714vVzkl9uKCzbNo_-95jHUNl17Xn8dj06ggvkpHG4JDlbBH2TT0q_Lm2nvw6mIZNbsOMsN6Ey9wbDrTTdpw0UN3povw6cWKT0TSBZIf0nQhGARG1SEnCUJ57bqRScGl1G0lho0CFAoLVM_pmEUUq2othjDiuQIxrVmZ7CTz3I8B89RERZEGg1z1TJS5jKQgicxS7Wf0skFVO3ex5-FLMa43Pbl39N3sN8adjvjTrv3egUH9lMXpVrXsLOcr_AG9pKvZbaY37pT_QYlTZm3
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=proceeding&rft.title=International+Conference+on+Simulation+of+Semiconductor+Processes+and+Devices&rft.atitle=Simulation+of+light-illuminated+STM+measurements&rft.au=Fukuda%2C+Koichi&rft.au=Nishizawa%2C+Masayasu&rft.au=Tada%2C+Tetsuya&rft.au=Bolotov%2C+Leonid&rft.date=2014-09-01&rft.pub=IEEE&rft.isbn=1479952877&rft.issn=1946-1569&rft.spage=129&rft.epage=132&rft_id=info:doi/10.1109%2FSISPAD.2014.6931580&rft.externalDocID=6931580
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1946-1569&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1946-1569&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1946-1569&client=summon