Mulaosmanovic, H., Breyer, E. T., Dünkel, S., Beyer, S., Mikolajick, T., & Slesazeck, S. (2021). Ferroelectric field-effect transistors based on HfO2: A review. Nanotechnology, 32(50), . https://doi.org/10.1088/1361-6528/ac189f
Chicago Style (17th ed.) CitationMulaosmanovic, Halid, Evelyn T. Breyer, Stefan Dünkel, Sven Beyer, Thomas Mikolajick, and Stefan Slesazeck. "Ferroelectric Field-effect Transistors Based on HfO2: A Review." Nanotechnology 32, no. 50 (2021). https://doi.org/10.1088/1361-6528/ac189f.
MLA (9th ed.) CitationMulaosmanovic, Halid, et al. "Ferroelectric Field-effect Transistors Based on HfO2: A Review." Nanotechnology, vol. 32, no. 50, 2021, https://doi.org/10.1088/1361-6528/ac189f.
Warning: These citations may not always be 100% accurate.