Photodetector Architecture for Open Circuit Voltage Operation of MWIR InAsSb Detectors
Unlike conventional detectors that rely on photocurrent, the open circuit voltage photodetector architecture relies on a detector operating in zero bias. The output from the detector is coupled to the gate of a FET in sub-threshold region. Radiometric characterization of this detector will be discus...
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| Published in: | 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) pp. 1 - 4 |
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| Main Authors: | , , , , , , , , |
| Format: | Conference Proceeding |
| Language: | English |
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IEEE
01.08.2019
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| Abstract | Unlike conventional detectors that rely on photocurrent, the open circuit voltage photodetector architecture relies on a detector operating in zero bias. The output from the detector is coupled to the gate of a FET in sub-threshold region. Radiometric characterization of this detector will be discussed. |
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| AbstractList | Unlike conventional detectors that rely on photocurrent, the open circuit voltage photodetector architecture relies on a detector operating in zero bias. The output from the detector is coupled to the gate of a FET in sub-threshold region. Radiometric characterization of this detector will be discussed. |
| Author | Taghipour, Zahra Specht, Teressa Fragasse, Roman Krishna, Sanjay Ronningen, Theodore J. Smith, Shane Khalil, Waleed Tantawy, Ramy Fuller, Earl |
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| Snippet | Unlike conventional detectors that rely on photocurrent, the open circuit voltage photodetector architecture relies on a detector operating in zero bias. The... |
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| SubjectTerms | CMOS image sensor technology Computer architecture Detectors Field effect transistors infrared imaging Logic gates mid-wave infrared detectors open circuit voltage Photoconductivity Photodetectors Physics read out integrated circuits |
| Title | Photodetector Architecture for Open Circuit Voltage Operation of MWIR InAsSb Detectors |
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