3D modeling based on current continuity for STM carrier profiling of semiconductor devices

Current continuity based 3D modeling of STM carrier profiling of semiconductor devices is achieved for the first time. Tunnel currents between probe tip and devices are solved consistently with current continuity consideration. It is revealed that tunnel current is reduced in current continuity mode...

Celý popis

Podrobná bibliografia

Vydané v:	2011 International Conference on Simulation of Semiconductor Processes and Devices s. 259 - 262
Hlavní autori:	Fukuda, K., Nishizawa, M., Tada, T., Bolotov, L., Suzuki, K., Sato, S., Arimoto, H., Kanayama, T.
Médium:	Konferenčný príspevok..
Jazyk:	English Japanese
Vydavateľské údaje:	IEEE 01.09.2011
Predmet:	Electric potential Junctions Probes Semiconductor device measurement Semiconductor process modeling Three dimensional displays Tunneling
ISBN:	9781612844190, 1612844197
ISSN:	1946-1569
On-line prístup:	Získať plný text
Tagy:	Pridať tag Žiadne tagy, Buďte prvý, kto otaguje tento záznam!