3D modeling based on current continuity for STM carrier profiling of semiconductor devices

Current continuity based 3D modeling of STM carrier profiling of semiconductor devices is achieved for the first time. Tunnel currents between probe tip and devices are solved consistently with current continuity consideration. It is revealed that tunnel current is reduced in current continuity mode...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	2011 International Conference on Simulation of Semiconductor Processes and Devices S. 259 - 262
Hauptverfasser:	Fukuda, K., Nishizawa, M., Tada, T., Bolotov, L., Suzuki, K., Sato, S., Arimoto, H., Kanayama, T.
Format:	Tagungsbericht
Sprache:	Englisch Japanisch
Veröffentlicht:	IEEE 01.09.2011
Schlagworte:	Electric potential Junctions Probes Semiconductor device measurement Semiconductor process modeling Three dimensional displays Tunneling
ISBN:	9781612844190, 1612844197
ISSN:	1946-1569
Online-Zugang:	Volltext
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