3D modeling based on current continuity for STM carrier profiling of semiconductor devices

Current continuity based 3D modeling of STM carrier profiling of semiconductor devices is achieved for the first time. Tunnel currents between probe tip and devices are solved consistently with current continuity consideration. It is revealed that tunnel current is reduced in current continuity mode...

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Vydané v:2011 International Conference on Simulation of Semiconductor Processes and Devices s. 259 - 262
Hlavní autori: Fukuda, K., Nishizawa, M., Tada, T., Bolotov, L., Suzuki, K., Sato, S., Arimoto, H., Kanayama, T.
Médium: Konferenčný príspevok..
Jazyk:English
Japanese
Vydavateľské údaje: IEEE 01.09.2011
Predmet:
Electric potential
Junctions
Probes
Semiconductor device measurement
Semiconductor process modeling
Three dimensional displays
Tunneling
ISBN:9781612844190, 1612844197
ISSN:1946-1569
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Abstract Current continuity based 3D modeling of STM carrier profiling of semiconductor devices is achieved for the first time. Tunnel currents between probe tip and devices are solved consistently with current continuity consideration. It is revealed that tunnel current is reduced in current continuity model under depletion conditions. Spatial resolution achieved in the model is discussed in comparison to potential based modeling. Influence of discrete dopants is also discussed in concern with Coulomb potential fluctuations in nanoscale systems, which is a key issue of nano devices.
AbstractList Current continuity based 3D modeling of STM carrier profiling of semiconductor devices is achieved for the first time. Tunnel currents between probe tip and devices are solved consistently with current continuity consideration. It is revealed that tunnel current is reduced in current continuity model under depletion conditions. Spatial resolution achieved in the model is discussed in comparison to potential based modeling. Influence of discrete dopants is also discussed in concern with Coulomb potential fluctuations in nanoscale systems, which is a key issue of nano devices.
Author Arimoto, H.
Suzuki, K.
Kanayama, T.
Tada, T.
Sato, S.
Nishizawa, M.
Bolotov, L.
Fukuda, K.
Author_xml – sequence: 1
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  surname: Fukuda
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  organization: Nanodevice Innovation Res. Center (NIRC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Ibaraki, Japan
– sequence: 2
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  surname: Nishizawa
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  organization: Nanodevice Innovation Res. Center (NIRC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Ibaraki, Japan
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  givenname: T.
  surname: Tada
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  surname: Bolotov
  fullname: Bolotov, L.
  organization: Inst. of Appl. Phys., Univ. of Tsukuba, Ibaraki, Japan
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  organization: Fujitsu Semicond. Ltd., Tokyo, Japan
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  organization: Fujitsu Semicond. Ltd., Tokyo, Japan
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  surname: Arimoto
  fullname: Arimoto, H.
  organization: Nanodevice Innovation Res. Center (NIRC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Ibaraki, Japan
– sequence: 8
  givenname: T.
  surname: Kanayama
  fullname: Kanayama, T.
  organization: Nanodevice Innovation Res. Center (NIRC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Ibaraki, Japan
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Snippet Current continuity based 3D modeling of STM carrier profiling of semiconductor devices is achieved for the first time. Tunnel currents between probe tip and...
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StartPage 259
SubjectTerms Electric potential
Junctions
Probes
Semiconductor device measurement
Semiconductor process modeling
Three dimensional displays
Tunneling
Title 3D modeling based on current continuity for STM carrier profiling of semiconductor devices
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