APA (7th ed.) Citation

Fukuda, K., Nishizawa, M., Tada, T., Bolotov, L., Suzuki, K., Sato, S., . . . Kanayama, T. (2011, September). 3D modeling based on current continuity for STM carrier profiling of semiconductor devices. 2011 International Conference on Simulation of Semiconductor Processes and Devices, 259-262. https://doi.org/10.1109/SISPAD.2011.6035074

Chicago Style (17th ed.) Citation

Fukuda, K., M. Nishizawa, T. Tada, L. Bolotov, K. Suzuki, S. Sato, H. Arimoto, and T. Kanayama. "3D Modeling Based on Current Continuity for STM Carrier Profiling of Semiconductor Devices." 2011 International Conference on Simulation of Semiconductor Processes and Devices Sep. 2011: 259-262. https://doi.org/10.1109/SISPAD.2011.6035074.

MLA (9th ed.) Citation

Fukuda, K., et al. "3D Modeling Based on Current Continuity for STM Carrier Profiling of Semiconductor Devices." 2011 International Conference on Simulation of Semiconductor Processes and Devices, Sep. 2011, pp. 259-262, https://doi.org/10.1109/SISPAD.2011.6035074.