Fukuda, K., Nishizawa, M., Tada, T., Bolotov, L., Suzuki, K., Sato, S., . . . Kanayama, T. (2011, September). 3D modeling based on current continuity for STM carrier profiling of semiconductor devices. 2011 International Conference on Simulation of Semiconductor Processes and Devices, 259-262. https://doi.org/10.1109/SISPAD.2011.6035074
Chicago-Zitierstil (17. Ausg.)Fukuda, K., M. Nishizawa, T. Tada, L. Bolotov, K. Suzuki, S. Sato, H. Arimoto, und T. Kanayama. "3D Modeling Based on Current Continuity for STM Carrier Profiling of Semiconductor Devices." 2011 International Conference on Simulation of Semiconductor Processes and Devices Sep. 2011: 259-262. https://doi.org/10.1109/SISPAD.2011.6035074.
MLA-Zitierstil (9. Ausg.)Fukuda, K., et al. "3D Modeling Based on Current Continuity for STM Carrier Profiling of Semiconductor Devices." 2011 International Conference on Simulation of Semiconductor Processes and Devices, Sep. 2011, pp. 259-262, https://doi.org/10.1109/SISPAD.2011.6035074.