Citace podle APA (7th ed.)

Fukuda, K., Nishizawa, M., Tada, T., Bolotov, L., Suzuki, K., Sato, S., . . . Kanayama, T. (2011, September). 3D modeling based on current continuity for STM carrier profiling of semiconductor devices. 2011 International Conference on Simulation of Semiconductor Processes and Devices, 259-262. https://doi.org/10.1109/SISPAD.2011.6035074

Citace podle Chicago (17th ed.)

Fukuda, K., M. Nishizawa, T. Tada, L. Bolotov, K. Suzuki, S. Sato, H. Arimoto, a T. Kanayama. "3D Modeling Based on Current Continuity for STM Carrier Profiling of Semiconductor Devices." 2011 International Conference on Simulation of Semiconductor Processes and Devices Sep. 2011: 259-262. https://doi.org/10.1109/SISPAD.2011.6035074.

Citace podle MLA (9th ed.)

Fukuda, K., et al. "3D Modeling Based on Current Continuity for STM Carrier Profiling of Semiconductor Devices." 2011 International Conference on Simulation of Semiconductor Processes and Devices, Sep. 2011, pp. 259-262, https://doi.org/10.1109/SISPAD.2011.6035074.

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