Capacitive RF MEMS switches using ultrananocrystalline diamond films

This paper presents the designs, calculated by means of finite element method simulations characteristics and proposes fabrication process of a shunt and a series capacitive RF MEMS switches. Instead of traditional dielectric materials ultrananocrystalline diamond (UNCD) is used as an insulator laye...

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Veröffentlicht in:Proceedings of the 2014 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference : 3-5 February 2014 S. 54 - 56
Hauptverfasser: Lebedeva, A., Alagashev, G.
Format: Tagungsbericht
Sprache:Englisch
Veröffentlicht: IEEE 01.02.2014
Schlagworte:
Diamonds
Electrodes
Microelectromechanical systems (MEMS)
Micromechanical devices
Microswitches
Radio frequency
Reliability
RF MEMS switches
ultrananocrystalline diamond (UNCD)
ISBN:9781479925933, 1479925934
Online-Zugang:Volltext
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Beschreibung
Zusammenfassung:This paper presents the designs, calculated by means of finite element method simulations characteristics and proposes fabrication process of a shunt and a series capacitive RF MEMS switches. Instead of traditional dielectric materials ultrananocrystalline diamond (UNCD) is used as an insulator layer of capacitive switches. These switches demonstrate isolation around 19-20 dB and loss around 0.3-0.4 dB at 10 GHz. The switches are candidates for high power microwave applications with high reliability due to unique charging characteristics of UNCD films.
ISBN:9781479925933
1479925934
DOI:10.1109/ElConRusNW.2014.6839200