Switching Current Density of Perpendicular Magnetization by Spin-Orbit Torque

In-plane current-induced strong dampinglike spin-orbit torque (SOT) can enable sub-nanosecond switching of thin-film nanomagnets for nonvolatile magnetic storage [1] . Enormous efforts have been made on developing energy-efficient, high-endurance, integration-friendly spin current generators (SCGs)...

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Bibliographic Details
Published in:2021 IEEE 32nd Magnetic Recording Conference (TMRC) pp. 1 - 2
Main Authors: Zhu, Lijun, Ralph, D. C., Buhrman, R. A.
Format: Conference Proceeding
Language:English
Published: IEEE 01.08.2021
Subjects:
Energy efficiency
Frequency modulation
Integrated circuits
Magnetization
Scalability
Switches
Torque
Online Access:Get full text
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Summary:In-plane current-induced strong dampinglike spin-orbit torque (SOT) can enable sub-nanosecond switching of thin-film nanomagnets for nonvolatile magnetic storage [1] . Enormous efforts have been made on developing energy-efficient, high-endurance, integration-friendly spin current generators (SCGs) [2] , [3] that can provide high dampinglike SOT efficiency \left( {\xi _{DL}^j} \right) . This is mainly motivated by the fact that \xi _{DL}^j of a SCG/ferromagnet (FM) heterostructure directly connects to the density of the critical switching current inside the SCG layer ( j c ) and thus the total switching current ( I c , the sum of the currents in the SCG and the FM layers) that will define the energy efficiency \left( { \propto I_{\text{c}}^2} \right) , the scalability (the transistor dimension ∝ I c ), and the endurance (electro-immigration \propto I_{\text{c}}^2 ) of spin-orbit torque magnetic tunnel junctions (SOT-MTJs).
DOI:10.1109/TMRC53175.2021.9605123