APA (7th ed.) Citation

Noh, T., Kim, C. J., Lee, J. Y., Ku, M., Kim, T. H., Kang, M., . . . Kang, B. S. (2025, November). Enhanced analog switching in Ta2O5/HfO2 bilayer resistive switching device for improved synaptic behavior in neuromorphic computing. Current applied physics. https://doi.org/10.1016/j.cap.2025.11.006

Chicago Style (17th ed.) Citation

Noh, Taehee, Cheol Jun Kim, Jae Yeob Lee, Minkyung Ku, Tae Hoon Kim, Minu Kang, Hyeon Su Seong, Seung Jin Kang, and Bo Soo Kang. "Enhanced Analog Switching in Ta2O5/HfO2 Bilayer Resistive Switching Device for Improved Synaptic Behavior in Neuromorphic Computing." Current Applied Physics Nov. 2025. https://doi.org/10.1016/j.cap.2025.11.006.

MLA (9th ed.) Citation

Noh, Taehee, et al. "Enhanced Analog Switching in Ta2O5/HfO2 Bilayer Resistive Switching Device for Improved Synaptic Behavior in Neuromorphic Computing." Current Applied Physics, Nov. 2025, https://doi.org/10.1016/j.cap.2025.11.006.