Noh, T., Kim, C. J., Lee, J. Y., Ku, M., Kim, T. H., Kang, M., . . . Kang, B. S. (2025, November). Enhanced analog switching in Ta2O5/HfO2 bilayer resistive switching device for improved synaptic behavior in neuromorphic computing. Current applied physics. https://doi.org/10.1016/j.cap.2025.11.006
Chicago-Zitierstil (17. Ausg.)Noh, Taehee, Cheol Jun Kim, Jae Yeob Lee, Minkyung Ku, Tae Hoon Kim, Minu Kang, Hyeon Su Seong, Seung Jin Kang, und Bo Soo Kang. "Enhanced Analog Switching in Ta2O5/HfO2 Bilayer Resistive Switching Device for Improved Synaptic Behavior in Neuromorphic Computing." Current Applied Physics Nov. 2025. https://doi.org/10.1016/j.cap.2025.11.006.
MLA-Zitierstil (9. Ausg.)Noh, Taehee, et al. "Enhanced Analog Switching in Ta2O5/HfO2 Bilayer Resistive Switching Device for Improved Synaptic Behavior in Neuromorphic Computing." Current Applied Physics, Nov. 2025, https://doi.org/10.1016/j.cap.2025.11.006.