Noh, T., Kim, C. J., Lee, J. Y., Ku, M., Kim, T. H., Kang, M., . . . Kang, B. S. (2025, November). Enhanced analog switching in Ta2O5/HfO2 bilayer resistive switching device for improved synaptic behavior in neuromorphic computing. Current applied physics. https://doi.org/10.1016/j.cap.2025.11.006
Citace podle Chicago (17th ed.)Noh, Taehee, Cheol Jun Kim, Jae Yeob Lee, Minkyung Ku, Tae Hoon Kim, Minu Kang, Hyeon Su Seong, Seung Jin Kang, a Bo Soo Kang. "Enhanced Analog Switching in Ta2O5/HfO2 Bilayer Resistive Switching Device for Improved Synaptic Behavior in Neuromorphic Computing." Current Applied Physics Nov. 2025. https://doi.org/10.1016/j.cap.2025.11.006.
Citace podle MLA (9th ed.)Noh, Taehee, et al. "Enhanced Analog Switching in Ta2O5/HfO2 Bilayer Resistive Switching Device for Improved Synaptic Behavior in Neuromorphic Computing." Current Applied Physics, Nov. 2025, https://doi.org/10.1016/j.cap.2025.11.006.