Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance

Crystal growth of eco-friendly, ultrawide bandgap aluminium gallium nitride (AlGaN) semiconductor-based ultraviolet-B (UVB) light-emitting diodes (LEDs) hold the potential to replace toxic mercury-based ultraviolet lamps. One of the major drawbacks in the utilisation of AlGaN-based UVB LEDs is their...

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Bibliographic Details
Published in:	Scientific reports Vol. 12; no. 1; pp. 2591 - 11
Main Authors:	Khan, M. Ajmal, Maeda, Noritoshi, Yun, Joosun, Jo, Masafumi, Yamada, Yoichi, Hirayama, Hideki
Format:	Journal Article
Language:	English
Published:	London Nature Publishing Group UK 16.02.2022 Nature Publishing Group Nature Portfolio
Subjects:	639/624/1020 639/624/400 Aluminum Crystal growth Efficiency Electrodes Gallium Humanities and Social Sciences Injection Light emitting diodes Mercury multidisciplinary Reflectance Science Science (multidisciplinary) Ultraviolet radiation
ISSN:	2045-2322, 2045-2322
Online Access:	Get full text
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