Metallization system as a part of thermal memory

This study aims to substantiate the potential of using “classical” metallization systems as microelectronic thermal memory cells. An experimental simulation is used to demonstrate that thermal information can be stored in memory for a certain time and then read without distortion. The possibility of...

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Bibliographic Details

Published in:	Heliyon Vol. 9; no. 5; p. e15797
Main Authors:	Skvortsov, Arkadiy A., Pshonkin, Danila E., Volodina, Olga V., Nikolaev, Vladimir K.
Format:	Journal Article
Language:	English
Published:	England Elsevier Ltd 01.05.2023 Elsevier
Subjects:	Contact interaction memory Metal-semiconductor silicon temperature Thermal (phonon) memory Thermal conductivity Thermal (phonon) memory Thermal conductivity DRAM Metal-semiconductor Contact interaction RAM
ISSN:	2405-8440, 2405-8440
Online Access:	Get full text
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