‘Memristive’ switches enable ‘stateful’ logic operations via material implication
A good memory for logic The possibility of combining the electrical properties of a memory element and a resistor — in a memristor or memristive device — was proposed by Leon Chua in 1971. It remained in the realms of theory until two years ago, when bipolar voltage-activated switches were identifie...
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| Vydané v: | Nature (London) Ročník 464; číslo 7290; s. 873 - 876 |
|---|---|
| Hlavní autori: | , , , , , |
| Médium: | Journal Article |
| Jazyk: | English |
| Vydavateľské údaje: |
London
Nature Publishing Group UK
08.04.2010
Nature Publishing Group |
| Predmet: | |
| ISSN: | 0028-0836, 1476-4687, 1476-4687 |
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| Abstract | A good memory for logic
The possibility of combining the electrical properties of a memory element and a resistor — in a memristor or memristive device — was proposed by Leon Chua in 1971. It remained in the realms of theory until two years ago, when bipolar voltage-activated switches were identified as physical realizations of the memristor. The resulting revival of interest in memristive devices looks set to continue now that Julien Borghetti and colleagues show how 'memristors' can also perform a fundamental class of logic operations that requires individual devices to act simultaneously as logic and memory elements.
A challenge in the semiconductor industry is to create integrated circuits that use new physical state variables — other than charge or voltage — to offer memory and logic functions. Memristive devices, which combine the electrical properties of a memory element and a resistor, use resistance instead, and here such 'memristors' are shown to perform logic operations as well.
The authors of the International Technology Roadmap for Semiconductors
1
—the industry consensus set of goals established for advancing silicon integrated circuit technology—have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions
1
,
2
,
3
,
4
,
5
,
6
beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated
7
,
8
,
9
,
10
,
11
,
12
. Among these, bipolar voltage-actuated switches have been identified as physical realizations of ‘memristors’ or memristive devices, combining the electrical properties of a memory element and a resistor
13
,
14
. Such devices were first hypothesized by Chua in 1971 (ref.
15
), and are characterized by one or more state variables
16
that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables
p
and
q
such that
p
IMP
q
is equivalent to (NOT
p
)OR
q
. Incorporated within an appropriate circuit
17
,
18
, memristive switches can thus perform ‘stateful’ logic operations for which the same devices serve simultaneously as gates (logic) and latches
19
(memory) that use resistance instead of voltage or charge as the physical state variable. |
|---|---|
| AbstractList | The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable. The authors of the International Technology Roadmap for Semiconductors (1)--the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions (1-6) beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated (7-12). Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor (13,14). Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables (16) that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit (17,18), memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (19) (memory) that use resistance instead of voltage or charge as the physical state variable. The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable. For the measurements reported in Fig. 1c and d, the series resistance of the millimetre-long but 50-nmwide address wires drops a significant fraction of the externally applied voltage; this voltage drop increases the external voltage required for switching, reduces the switching ratio as seen from the drive electronics, and creates a large resistance-capacitance time constant that limits the speed of the measurements. [...] the top 11-nm-thick Pt wires were fabricated using the same process as the bottom wire. A good memory for logic The possibility of combining the electrical properties of a memory element and a resistor — in a memristor or memristive device — was proposed by Leon Chua in 1971. It remained in the realms of theory until two years ago, when bipolar voltage-activated switches were identified as physical realizations of the memristor. The resulting revival of interest in memristive devices looks set to continue now that Julien Borghetti and colleagues show how 'memristors' can also perform a fundamental class of logic operations that requires individual devices to act simultaneously as logic and memory elements. A challenge in the semiconductor industry is to create integrated circuits that use new physical state variables — other than charge or voltage — to offer memory and logic functions. Memristive devices, which combine the electrical properties of a memory element and a resistor, use resistance instead, and here such 'memristors' are shown to perform logic operations as well. The authors of the International Technology Roadmap for Semiconductors 1 —the industry consensus set of goals established for advancing silicon integrated circuit technology—have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions 1 , 2 , 3 , 4 , 5 , 6 beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated 7 , 8 , 9 , 10 , 11 , 12 . Among these, bipolar voltage-actuated switches have been identified as physical realizations of ‘memristors’ or memristive devices, combining the electrical properties of a memory element and a resistor 13 , 14 . Such devices were first hypothesized by Chua in 1971 (ref. 15 ), and are characterized by one or more state variables 16 that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that p IMP q is equivalent to (NOT p )OR q . Incorporated within an appropriate circuit 17 , 18 , memristive switches can thus perform ‘stateful’ logic operations for which the same devices serve simultaneously as gates (logic) and latches 19 (memory) that use resistance instead of voltage or charge as the physical state variable. |
| Audience | Academic |
| Author | Kuekes, Philip J. Snider, Gregory S. Williams, R. Stanley Borghetti, Julien Stewart, Duncan R. Yang, J. Joshua |
| Author_xml | – sequence: 1 givenname: Julien surname: Borghetti fullname: Borghetti, Julien organization: Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA – sequence: 2 givenname: Gregory S. surname: Snider fullname: Snider, Gregory S. organization: Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA – sequence: 3 givenname: Philip J. surname: Kuekes fullname: Kuekes, Philip J. organization: Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA – sequence: 4 givenname: J. Joshua surname: Yang fullname: Yang, J. Joshua organization: Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA – sequence: 5 givenname: Duncan R. surname: Stewart fullname: Stewart, Duncan R. email: duncan.stewart@nrc.gc.ca organization: Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA , Present address: Steacie Institute for Molecular Science, National Research Council of Canada, 100 Sussex Drive, Ottawa, Ontario, K1A OR6 Canada – sequence: 6 givenname: R. Stanley surname: Williams fullname: Williams, R. Stanley email: stan.williams@hp.com organization: Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA |
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| Keywords | Memory devices Thin film device Semiconductor thin films Dielectric materials Dynamical storage Logic gate Transistor Memristor State variable Non linear device Boolean logic Latch circuit Selector switch Electrical characteristic |
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Today20035643491:CAS:528:DC%2BD3sXkt1Sjur8%3D10.1063/1.15835332003PhT....56E..43H ChenYNanoscale molecular-switch crossbar circuitsNanotechnology2003144624681:CAS:528:DC%2BD3sXlsFejtLo%3D10.1088/0957-4484/14/4/3112003Nanot..14..462C DeHonAArray-based architecture for FET-based, nanoscale electronicsIEEE Trans. NanoTechnol.20032233210.1109/TNANO.2003.8085082003ITNan...2...23D AllwoodDAMagnetic domain-wall logicScience2005309168816921:CAS:528:DC%2BD2MXpvFCis7Y%3D10.1126/science.11088132005Sci...309.1688A BorghettiJA hybrid nanomemristor/transistor logic circuit capable of self-programmingProc. Natl Acad. Sci. USA2009106169917031:CAS:528:DC%2BD1MXitV2jur4%3D10.1073/pnas.08066421062009PNAS..106.1699B KimuraHComplementary ferroelectric-capacitor logic for low-power logic-in-memory VLSIIEEE Solid-State Circuit.20043991992610.1109/JSSC.2004.8278022004IJSSC..39..919K BorghettiJElectrical transport and thermometry of electroformed titanium dioxide memristive switchesJ. Appl. 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| References_xml | – reference: DeryHDalalPCywinskiLShamLJSpin-based logic in semiconductors for reconfigurable large-scale circuitsNature20074475735761:CAS:528:DC%2BD2sXlvVyktLY%3D10.1038/nature058331151.824202007Natur.447..573D – reference: ChuaLOMemristor—the missing circuit elementIEEE Trans. Circuit. Theor.1971CT-1850751910.1109/TCT.1971.1083337 – reference: HeathJRatnerMMolecular electronicsPhys. Today20035643491:CAS:528:DC%2BD3sXkt1Sjur8%3D10.1063/1.15835332003PhT....56E..43H – reference: BorghettiJElectrical transport and thermometry of electroformed titanium dioxide memristive switchesJ. Appl. Phys.200910612450410.1063/1.32646212009JAP...106l4504B – reference: International. Technology Roadmap for Semiconductors (ITRS). Emerging Research Devices. ITRS technical report 〈http://www.itrs.net/Links/2009ITRS/2009Chapters_2009Tables/2009_ERD.pdf〉 (2009) – reference: JungG-YCircuit fabrication at 17 nm half-pitch by nano-imprint lithographyNano Lett.200663513541:CAS:528:DC%2BD28XhtVOqsrY%3D10.1021/nl052110f2006NanoL...6..351J – reference: LuoYTwo-dimensional molecular electronics circuitsChem. Phys. Chem.200235195251:CAS:528:DC%2BD38XltVWmtbo%3D10.1002/1439-7641(20020617)3:6<519::AID-CPHC519>3.0.CO;2-2 – reference: ChenYNanoscale molecular-switch devices fabricated by imprint lithographyAppl. Phys. Lett.200382161016121:CAS:528:DC%2BD3sXhvV2lt7k%3D10.1063/1.15594392003ApPhL..82.1610C – reference: WaserRDittmanRStaikovGSzotKRedox-based resistive switching memories—nanoionic mechanism, prospects, and challengesAdv. 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| Snippet | A good memory for logic
The possibility of combining the electrical properties of a memory element and a resistor — in a memristor or memristive device — was... The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit... The authors of the International Technology Roadmap for Semiconductors (1)--the industry consensus set of goals established for advancing silicon integrated... For the measurements reported in Fig. 1c and d, the series resistance of the millimetre-long but 50-nmwide address wires drops a significant fraction of the... |
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| SubjectTerms | 639/166/987 Applied sciences Arrays Circuit properties Design and construction Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Humanities and Social Sciences Innovations Integrated circuits letter Memory (Computers) multidisciplinary Science Semiconductor chips Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor industry Switching, multiplexing, switched capacity circuits Thin film devices Transistors Wire |
| Title | ‘Memristive’ switches enable ‘stateful’ logic operations via material implication |
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