Dual polarization-enabled ultrafast bulk photovoltaic response in van der Waals heterostructures

The bulk photovoltaic effect (BPVE) originating from spontaneous charge polarizations can reach high conversion efficiency exceeding the Shockley-Queisser limit. Emerging van der Waals (vdW) heterostructures provide the ideal platform for BPVE due to interfacial interactions naturally breaking the c...

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Vydáno v:Nature communications Ročník 15; číslo 1; s. 5355 - 9
Hlavní autoři: Zeng, Zhouxiaosong, Tian, Zhiqiang, Wang, Yufan, Ge, Cuihuan, Strauß, Fabian, Braun, Kai, Michel, Patrick, Huang, Lanyu, Liu, Guixian, Li, Dong, Scheele, Marcus, Chen, Mingxing, Pan, Anlian, Wang, Xiao
Médium: Journal Article
Jazyk:angličtina
Vydáno: London Nature Publishing Group UK 25.06.2024
Nature Publishing Group
Nature Portfolio
Témata:
639/301/1005/1007
639/301/357/1018
Crystals
Current carriers
Efficiency
Electric fields
Electron transport
Heterostructures
Humanities and Social Sciences
Interlayers
Laboratories
Lasers
Linear polarization
Molybdenum disulfide
multidisciplinary
Optoelectronic devices
Phosphorus
Photovoltaic effect
Photovoltaics
Physics
Polarization
Powder metallurgy
Response time
Science
Science (multidisciplinary)
Symmetry
ISSN:2041-1723, 2041-1723
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Shrnutí:The bulk photovoltaic effect (BPVE) originating from spontaneous charge polarizations can reach high conversion efficiency exceeding the Shockley-Queisser limit. Emerging van der Waals (vdW) heterostructures provide the ideal platform for BPVE due to interfacial interactions naturally breaking the crystal symmetries of the individual constituents and thus inducing charge polarizations. Here, we show an approach to obtain ultrafast BPVE by taking advantage of dual interfacial polarizations in vdW heterostructures. While the in-plane polarization gives rise to the BPVE in the overlayer, the charge carrier transfer assisted by the out-of-plane polarization further accelerates the interlayer electronic transport and enhances the BPVE. We illustrate the concept in MoS 2 /black phosphorus heterostructures, where the experimentally observed intrinsic BPVE response time achieves 26 ps, orders of magnitude faster than that of conventional non-centrosymmetric materials. Moreover, the heterostructure device possesses an extrinsic response time of approximately 2.2 ns and a bulk photovoltaic coefficient of 0.6 V −1 , which is among the highest values for vdW BPV devices reported so far. Our study thus points to an effective way of designing ultrafast BPVE for high-speed photodetection. The bulk photovoltaic effect (BPVE) has potential for the realization of high conversion efficiency optoelectronic devices. Here, the authors show that combined in-plane and out-of-plane charge polarizations in MoS 2 /black phosphorus heterostructures can enhance the BPVE and reduce the extrinsic response times down to 2.2 ns.
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ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-024-49760-6