High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate

In this work, the influence of micro- and macro-deformation profiles in GaN nanowires (NWs) on the angular intensity distribution of X-ray diffraction are studied theoretically. The calculations are performed by using kinematical theory of X-ray diffraction and assuming the deformation decays expone...

Celý popis

Uloženo v:

Podrobná bibliografie
Vydáno v:	Nanoscale research letters Ročník 10; číslo 1; s. 51
Hlavní autoři:	Stanchu, Hryhorii, Kladko, Vasyl, Kuchuk, Andrian V, Safriuk, Nadiia, Belyaev, Alexander, Wierzbicka, Aleksandra, Sobanska, Marta, Klosek, Kamil, Zytkiewicz, Zbigniew R
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Boston Springer US 06.02.2015 Springer Nature B.V
Témata:	Chemistry and Materials Science Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Nanotechnology and nanomaterials (NANO-2014) Nanowires Self-assembly Silicon substrates Strain analysis Strain distribution X-ray diffraction X-ray scattering Deformation Nanowires Kinematical theory GaN X-ray diffraction profile
ISSN:	1931-7573, 1556-276X
On-line přístup:	Získat plný text
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!

Buďte první, kdo okomentuje tento záznam!