High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate

In this work, the influence of micro- and macro-deformation profiles in GaN nanowires (NWs) on the angular intensity distribution of X-ray diffraction are studied theoretically. The calculations are performed by using kinematical theory of X-ray diffraction and assuming the deformation decays expone...

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Vydáno v:Nanoscale research letters Ročník 10; číslo 1; s. 51
Hlavní autoři: Stanchu, Hryhorii, Kladko, Vasyl, Kuchuk, Andrian V, Safriuk, Nadiia, Belyaev, Alexander, Wierzbicka, Aleksandra, Sobanska, Marta, Klosek, Kamil, Zytkiewicz, Zbigniew R
Médium: Journal Article
Jazyk:angličtina
Vydáno: Boston Springer US 06.02.2015
Springer Nature B.V
Témata:
Chemistry and Materials Science
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Nanotechnology and nanomaterials (NANO-2014)
Nanowires
Self-assembly
Silicon substrates
Strain analysis
Strain distribution
X-ray diffraction
X-ray scattering
Deformation
Nanowires
Kinematical theory
GaN
X-ray diffraction profile
ISSN:1931-7573, 1556-276X
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Shrnutí:In this work, the influence of micro- and macro-deformation profiles in GaN nanowires (NWs) on the angular intensity distribution of X-ray diffraction are studied theoretically. The calculations are performed by using kinematical theory of X-ray diffraction and assuming the deformation decays exponentially from the NW/substrate interface. Theoretical modeling of X-ray scattering from NWs with different deformation profiles are carried out. We show that the shape of the (002) 2θ/ω X-ray diffraction profile (XDP) is defined by initial deformation at the NW's bottom and its relaxation depth given by the decay depth of the exponential deformation profile. Also, we demonstrate that macro-deformation leads to XDP shift, whereas micro-deformations are the cause of XDP's asymmetry and its symmetrical broadening. A good correlation between calculated and experimental XDP from self-assembled GaN NWs on Si(111) substrate was achieved by taking into account all parameters of micro- and macro-deformation profiles.
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ISSN:1931-7573
1556-276X
DOI:10.1186/s11671-015-0766-x