Circular polarization in a non-magnetic resonant tunneling device

We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n -type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emissi...

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Vydané v:Nanoscale research letters Ročník 6; číslo 1; s. 101
Hlavní autori: dos Santos, Lara F, Gobato, Yara Galvão, Teodoro, Márcio D, Lopez-Richard, Victor, Marques, Gilmar E, Brasil, Maria JSP, Orlita, Milan, Kunc, Jan, Maude, Duncan K, Henini, Mohamed, Airey, Robert J
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: New York Springer New York 25.01.2011
Springer Nature B.V
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ISSN:1556-276X, 1931-7573, 1556-276X
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Shrnutí:We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n -type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g -factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.
Bibliografia:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:1556-276X
1931-7573
1556-276X
DOI:10.1186/1556-276X-6-101