Circular polarization in a non-magnetic resonant tunneling device

We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n -type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emissi...

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Veröffentlicht in:Nanoscale research letters Jg. 6; H. 1; S. 101
Hauptverfasser: dos Santos, Lara F, Gobato, Yara Galvão, Teodoro, Márcio D, Lopez-Richard, Victor, Marques, Gilmar E, Brasil, Maria JSP, Orlita, Milan, Kunc, Jan, Maude, Duncan K, Henini, Mohamed, Airey, Robert J
Format: Journal Article
Sprache:Englisch
Veröffentlicht: New York Springer New York 25.01.2011
Springer Nature B.V
Springer
SpringerOpen
Schlagworte:
Chemistry and Materials Science
International Conference on Superlattices
Magnetic fields
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanostructures and Nanodevices (ICSNN 2010)
Nanotechnology
Nanotechnology and Microengineering
Polarization
Circular Polarization
Spin Polarization
Contact Layer
Voltage Dependence
Quantum Well
ISSN:1556-276X, 1931-7573, 1556-276X
Online-Zugang:Volltext
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Zusammenfassung:We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n -type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g -factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.
Bibliographie:ObjectType-Article-1
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ISSN:1556-276X
1931-7573
1556-276X
DOI:10.1186/1556-276X-6-101