Circular polarization in a non-magnetic resonant tunneling device

We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n -type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emissi...

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Veröffentlicht in:	Nanoscale research letters Jg. 6; H. 1; S. 101
Hauptverfasser:	dos Santos, Lara F, Gobato, Yara Galvão, Teodoro, Márcio D, Lopez-Richard, Victor, Marques, Gilmar E, Brasil, Maria JSP, Orlita, Milan, Kunc, Jan, Maude, Duncan K, Henini, Mohamed, Airey, Robert J
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	New York Springer New York 25.01.2011 Springer Nature B.V Springer SpringerOpen
Schlagworte:	Chemistry and Materials Science International Conference on Superlattices Magnetic fields Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanostructures and Nanodevices (ICSNN 2010) Nanotechnology Nanotechnology and Microengineering Polarization Circular Polarization Spin Polarization Contact Layer Voltage Dependence Quantum Well
ISSN:	1556-276X, 1931-7573, 1556-276X
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Abstract	We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n -type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g -factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.
AbstractList	Abstract We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects. We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects. We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects. We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects. We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n -type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g -factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.
ArticleNumber	101
Author	Maude, Duncan K Lopez-Richard, Victor dos Santos, Lara F Brasil, Maria JSP Henini, Mohamed Airey, Robert J Marques, Gilmar E Orlita, Milan Gobato, Yara Galvão Kunc, Jan Teodoro, Márcio D
AuthorAffiliation	5 EPSRC National Centre for III-V Technologies, The University of Sheffield, Sheffield, UK 6 Institute of Physics, Charles University, Ke Karlovu 5, 121 16 Praha 2, Czech Republic 2 Physics Institute, UNICAMP, Campinas, Brazil 1 Physics Department, Federal University of São Carlos, São Carlos, Brazil 3 Grenoble High Magnet Field Laboratory, Grenoble, France 4 School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham, NG7 2RD, UK
AuthorAffiliation_xml	– name: 1 Physics Department, Federal University of São Carlos, São Carlos, Brazil – name: 3 Grenoble High Magnet Field Laboratory, Grenoble, France – name: 4 School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham, NG7 2RD, UK – name: 6 Institute of Physics, Charles University, Ke Karlovu 5, 121 16 Praha 2, Czech Republic – name: 5 EPSRC National Centre for III-V Technologies, The University of Sheffield, Sheffield, UK – name: 2 Physics Institute, UNICAMP, Campinas, Brazil
Author_xml	– sequence: 1 givenname: Lara F surname: dos Santos fullname: dos Santos, Lara F organization: Physics Department, Federal University of São Carlos – sequence: 2 givenname: Yara Galvão surname: Gobato fullname: Gobato, Yara Galvão email: yara@df.ufscar.br organization: Physics Department, Federal University of São Carlos – sequence: 3 givenname: Márcio D surname: Teodoro fullname: Teodoro, Márcio D organization: Physics Department, Federal University of São Carlos – sequence: 4 givenname: Victor surname: Lopez-Richard fullname: Lopez-Richard, Victor organization: Physics Department, Federal University of São Carlos – sequence: 5 givenname: Gilmar E surname: Marques fullname: Marques, Gilmar E organization: Physics Department, Federal University of São Carlos – sequence: 6 givenname: Maria JSP surname: Brasil fullname: Brasil, Maria JSP organization: Physics Institute, UNICAMP – sequence: 7 givenname: Milan surname: Orlita fullname: Orlita, Milan organization: Grenoble High Magnet Field Laboratory, Institute of Physics, Charles University – sequence: 8 givenname: Jan surname: Kunc fullname: Kunc, Jan organization: Grenoble High Magnet Field Laboratory, Institute of Physics, Charles University – sequence: 9 givenname: Duncan K surname: Maude fullname: Maude, Duncan K organization: Grenoble High Magnet Field Laboratory – sequence: 10 givenname: Mohamed surname: Henini fullname: Henini, Mohamed organization: School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham – sequence: 11 givenname: Robert J surname: Airey fullname: Airey, Robert J organization: EPSRC National Centre for III-V Technologies, The University of Sheffield
BackLink	https://www.ncbi.nlm.nih.gov/pubmed/21711613$$D View this record in MEDLINE/PubMed
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Cites_doi	10.1103/PhysRevB.45.3922 10.1063/1.2772662 10.1063/1.1580631 10.1103/PhysRevLett.90.166601 10.1103/PhysRevB.72.075332 10.1063/1.1350600 10.1063/1.2908867 10.1103/PhysRevB.76.075344 10.1103/PhysRevB.73.155317 10.1038/45509 10.1103/PhysRevB.68.245319 10.1103/PhysRevB.65.073311 10.1103/PhysRevB.70.155314 10.1103/PhysRevB.62.8180 10.1063/1.123515 10.1038/45502 10.1103/PhysRevLett.91.056602 10.1063/1.2472522 10.1103/PhysRevLett.94.056601 10.1103/PhysRevLett.90.246601
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Copyright	dos Santos et al; licensee Springer. 2011. This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The Author(s) 2011 Copyright ©2011 dos Santos et al; licensee Springer. 2011 dos Santos et al; licensee Springer.
Copyright_xml	– notice: dos Santos et al; licensee Springer. 2011. This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. – notice: The Author(s) 2011 – notice: Copyright ©2011 dos Santos et al; licensee Springer. 2011 dos Santos et al; licensee Springer.
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Keywords	Circular Polarization Spin Polarization Contact Layer Voltage Dependence Quantum Well
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Snippet	We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n -type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field... We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field... Abstract We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic...
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SubjectTerms	Chemistry and Materials Science International Conference on Superlattices Magnetic fields Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanostructures and Nanodevices (ICSNN 2010) Nanotechnology Nanotechnology and Microengineering Polarization
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Title	Circular polarization in a non-magnetic resonant tunneling device
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