Circular polarization in a non-magnetic resonant tunneling device
We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n -type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emissi...
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| Vydané v: | Nanoscale research letters Ročník 6; číslo 1; s. 101 |
|---|---|
| Hlavní autori: | , , , , , , , , , , |
| Médium: | Journal Article |
| Jazyk: | English |
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New York
Springer New York
25.01.2011
Springer Nature B.V Springer SpringerOpen |
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| ISSN: | 1556-276X, 1931-7573, 1556-276X |
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| Abstract | We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric
n
-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the
g
-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects. |
|---|---|
| AbstractList | We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects. We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects. We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects. We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n -type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g -factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects. Abstract We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects. |
| ArticleNumber | 101 |
| Author | Maude, Duncan K Lopez-Richard, Victor dos Santos, Lara F Brasil, Maria JSP Henini, Mohamed Airey, Robert J Marques, Gilmar E Orlita, Milan Gobato, Yara Galvão Kunc, Jan Teodoro, Márcio D |
| AuthorAffiliation | 5 EPSRC National Centre for III-V Technologies, The University of Sheffield, Sheffield, UK 6 Institute of Physics, Charles University, Ke Karlovu 5, 121 16 Praha 2, Czech Republic 2 Physics Institute, UNICAMP, Campinas, Brazil 1 Physics Department, Federal University of São Carlos, São Carlos, Brazil 3 Grenoble High Magnet Field Laboratory, Grenoble, France 4 School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham, NG7 2RD, UK |
| AuthorAffiliation_xml | – name: 1 Physics Department, Federal University of São Carlos, São Carlos, Brazil – name: 3 Grenoble High Magnet Field Laboratory, Grenoble, France – name: 4 School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham, NG7 2RD, UK – name: 6 Institute of Physics, Charles University, Ke Karlovu 5, 121 16 Praha 2, Czech Republic – name: 5 EPSRC National Centre for III-V Technologies, The University of Sheffield, Sheffield, UK – name: 2 Physics Institute, UNICAMP, Campinas, Brazil |
| Author_xml | – sequence: 1 givenname: Lara F surname: dos Santos fullname: dos Santos, Lara F organization: Physics Department, Federal University of São Carlos – sequence: 2 givenname: Yara Galvão surname: Gobato fullname: Gobato, Yara Galvão email: yara@df.ufscar.br organization: Physics Department, Federal University of São Carlos – sequence: 3 givenname: Márcio D surname: Teodoro fullname: Teodoro, Márcio D organization: Physics Department, Federal University of São Carlos – sequence: 4 givenname: Victor surname: Lopez-Richard fullname: Lopez-Richard, Victor organization: Physics Department, Federal University of São Carlos – sequence: 5 givenname: Gilmar E surname: Marques fullname: Marques, Gilmar E organization: Physics Department, Federal University of São Carlos – sequence: 6 givenname: Maria JSP surname: Brasil fullname: Brasil, Maria JSP organization: Physics Institute, UNICAMP – sequence: 7 givenname: Milan surname: Orlita fullname: Orlita, Milan organization: Grenoble High Magnet Field Laboratory, Institute of Physics, Charles University – sequence: 8 givenname: Jan surname: Kunc fullname: Kunc, Jan organization: Grenoble High Magnet Field Laboratory, Institute of Physics, Charles University – sequence: 9 givenname: Duncan K surname: Maude fullname: Maude, Duncan K organization: Grenoble High Magnet Field Laboratory – sequence: 10 givenname: Mohamed surname: Henini fullname: Henini, Mohamed organization: School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham – sequence: 11 givenname: Robert J surname: Airey fullname: Airey, Robert J organization: EPSRC National Centre for III-V Technologies, The University of Sheffield |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/21711613$$D View this record in MEDLINE/PubMed |
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| Cites_doi | 10.1103/PhysRevB.45.3922 10.1063/1.2772662 10.1063/1.1580631 10.1103/PhysRevLett.90.166601 10.1103/PhysRevB.72.075332 10.1063/1.1350600 10.1063/1.2908867 10.1103/PhysRevB.76.075344 10.1103/PhysRevB.73.155317 10.1038/45509 10.1103/PhysRevB.68.245319 10.1103/PhysRevB.65.073311 10.1103/PhysRevB.70.155314 10.1103/PhysRevB.62.8180 10.1063/1.123515 10.1038/45502 10.1103/PhysRevLett.91.056602 10.1063/1.2472522 10.1103/PhysRevLett.94.056601 10.1103/PhysRevLett.90.246601 |
| ContentType | Journal Article |
| Copyright | dos Santos et al; licensee Springer. 2011. This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The Author(s) 2011 Copyright ©2011 dos Santos et al; licensee Springer. 2011 dos Santos et al; licensee Springer. |
| Copyright_xml | – notice: dos Santos et al; licensee Springer. 2011. This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. – notice: The Author(s) 2011 – notice: Copyright ©2011 dos Santos et al; licensee Springer. 2011 dos Santos et al; licensee Springer. |
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| Keywords | Circular Polarization Spin Polarization Contact Layer Voltage Dependence Quantum Well |
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| Snippet | We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric
n
-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field... We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field... Abstract We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic... |
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| SubjectTerms | Chemistry and Materials Science International Conference on Superlattices Magnetic fields Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanostructures and Nanodevices (ICSNN 2010) Nanotechnology Nanotechnology and Microengineering Polarization |
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| Title | Circular polarization in a non-magnetic resonant tunneling device |
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