Electrolyte-Gated Organic Field-Effect Transistor Based on a Solution Sheared Organic Semiconductor Blend

This communication presents a novel electrolyte gated field‐effect transistor based on a blend of dibenzo‐tetrathiafulvalene and polystyrene deposited through bar‐assisted meniscus shearing. This technique allows the fabrication of high performing electronic devices suitable for (bio)sensing applica...

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Vydáno v:Advanced materials (Weinheim) Ročník 28; číslo 46; s. 10311 - 10316
Hlavní autoři: Leonardi, Francesca, Casalini, Stefano, Zhang, Qiaoming, Galindo, Sergi, Gutiérrez, Diego, Mas-Torrent, Marta
Médium: Journal Article
Jazyk:angličtina
Vydáno: Germany Blackwell Publishing Ltd 01.12.2016
Témata:
Aqueous solutions
Blends
Devices
Electrolytes
Field effect transistors
organic field-effect transistors
organic large-area electronics
organic semiconductors
Polystyrene resins
printable electronics
Semiconductor devices
Shearing
solution shearing
organic semiconductors
printable electronics
solution shearing
organic field-effect transistors
organic large-area electronics
ISSN:0935-9648, 1521-4095
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Shrnutí:This communication presents a novel electrolyte gated field‐effect transistor based on a blend of dibenzo‐tetrathiafulvalene and polystyrene deposited through bar‐assisted meniscus shearing. This technique allows the fabrication of high performing electronic devices suitable for (bio)sensing applications and might capture industrial interest due to its scalability. The reported devices can operate in aqueous solution with comparable complexity to real samples.
Bibliografie:istex:6345D16CD7967D42A86E6B0D243CF40EC64340D9
ArticleID:ADMA201602479
ark:/67375/WNG-NZ12RS0S-B
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201602479