Electronic, Structural and Functional Versatility in Tetrathiafulvalene‐Lanthanide Metal–Organic Frameworks

Tetrathiafulvalene‐lanthanide (TTF‐Ln) metal–organic frameworks (MOFs) are an interesting class of multifunctional materials in which porosity can be combined with electronic properties such as electrical conductivity, redox activity, luminescence and magnetism. Herein a new family of isostructural...

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Veröffentlicht in:Chemistry : a European journal Jg. 25; H. 54; S. 12636 - 12643
Hauptverfasser: Castells‐Gil, Javier, Mañas‐Valero, Samuel, Vitórica‐Yrezábal, Iñigo J., Ananias, Duarte, Rocha, João, Santiago, Raul, Bromley, Stefan T., Baldoví, José J., Coronado, Eugenio, Souto, Manuel, Mínguez Espallargas, Guillermo
Format: Journal Article
Sprache:Englisch
Veröffentlicht: Germany Wiley Subscription Services, Inc 25.09.2019
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ISSN:0947-6539, 1521-3765, 1521-3765
Online-Zugang:Volltext
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Zusammenfassung:Tetrathiafulvalene‐lanthanide (TTF‐Ln) metal–organic frameworks (MOFs) are an interesting class of multifunctional materials in which porosity can be combined with electronic properties such as electrical conductivity, redox activity, luminescence and magnetism. Herein a new family of isostructural TTF‐Ln MOFs is reported, denoted as MUV‐5(Ln) (Ln=Gd, Tb, Dy, Ho, Er), exhibiting semiconducting properties as a consequence of the short intermolecular S⋅⋅⋅S contacts established along the chain direction between partially oxidised TTF moieties. In addition, this family shows photoluminescence properties and single‐molecule magnetic behaviour, finding near‐infrared (NIR) photoluminescence in the Yb/Er derivative and slow relaxation of the magnetisation in the Dy and Er derivatives. As such properties are dependent on the electronic structure of the lanthanide ion, the immense structural, electronic and functional versatility of this class of materials is emphasised. Hot MOFs: Herein a new family of isostructural TTF‐Ln MOFs (Ln=Gd, Tb, Dy, Ho, Er), named MUV‐5, are presented, exhibiting electrical conductivity, NIR luminescence and magnetic properties.
Bibliographie:https://doi.org/10.26434/chemrxiv.9037352.v1
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ISSN:0947-6539
1521-3765
1521-3765
DOI:10.1002/chem.201902855