Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering

Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into exi...

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Bibliographic Details
Published in:Scientific reports Vol. 9; no. 1; pp. 15287 - 9
Main Authors: Chang, Chun-Chieh, Nogan, John, Yang, Zu-Po, Kort-Kamp, Wilton J. M., Ross, Willard, Luk, Ting S., Dalvit, Diego A. R., Azad, Abul K., Chen, Hou-Tong
Format: Journal Article
Language:English
Published: London Nature Publishing Group UK 25.10.2019
Nature Publishing Group
Subjects:
639/624/399
639/925/927/1021
Bias
CMOS
Energy Sciences
Fabrication
Gold
High temperature
Humanities and Social Sciences
Laboratories
Material Science
MATERIALS SCIENCE
multidisciplinary
Nanophotonics and plasmonics
Optical materials and structures
Optical properties
Plasma
Science
Science (multidisciplinary)
Temperature effects
Thin films
Titanium
ISSN:2045-2322, 2045-2322
Online Access:Get full text
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Summary:Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.
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USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
89233218CNA000001; AC52-06NA25396; MOST-106-2221-E-009-122-MY3
Ministry of Science and Technology of Taiwan (MOST)
USDOE Laboratory Directed Research and Development (LDRD) Program
USDOE National Nuclear Security Administration (NNSA)
LA-UR-19-29707
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-019-51236-3