Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers

GaN nanowires grown on metal substrates have attracted increasing interest for a wide range of applications. Herein, we report GaN nanowires grown by plasma-assisted molecular beam epitaxy on thin polycrystalline ZrN buffer layers, sputtered onto Si(111) substrates. The nanowire orientation was stud...

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Vydané v:	Nanomaterials (Basel, Switzerland) Ročník 13; číslo 18; s. 2587
Hlavní autori:	Olszewski, Karol, Sobanska, Marta, Dubrovskii, Vladimir G., Leshchenko, Egor D., Wierzbicka, Aleksandra, Zytkiewicz, Zbigniew R.
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Basel MDPI AG 01.09.2023 MDPI
Predmet:	Angles (geometry) Attitude (inclination) Buffer layers Density Diffraction Epitaxial growth Epitaxy Gallium compounds Gallium nitrides GaN nanowires geometrical selection Geometry Grain size Identification and classification Misfit dislocations Molecular beam epitaxy Nanoparticles Nanotechnology nanowire orientation Nanowires Nitrides Nucleation Plasma Polycrystals Properties Scanning electron microscopy Silicon substrates Temperature Thin films X-ray diffraction X-rays Zirconium nitrides ZrN buffer layers Poland Russia
ISSN:	2079-4991, 2079-4991
On-line prístup:	Získať plný text
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