Electrostatic Potential Fluctuations on Oxide-Passivated Si(111) Surfaces Measured Using Integrated Scanning Probe Microscopy

Variations of the electrostatic potential were investigated for oxide-passivated n-Si(111) surfaces with atomically flat terraces by measuring the force acting on an ultra-sharp tungsten probe that was attached to the quartz resonator of an atomic force microscope. When the probe-sample gap maintain...

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Vydáno v:	E-journal of surface science and nanotechnology Ročník 9; s. 117 - 121
Hlavní autoři:	Kanayama, Toshihiko, Iitake, Masanori, Nishizawa, Masayasu, Bolotov, Leonid, Tada, Tetsuya
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Tokyo The Japan Society of Vacuum and Surface Science 01.01.2011 Japan Science and Technology Agency
Témata:	Scanning Tunneling Microscopy Semiconductor-insulator interfaces Silicon Surface electronic phenomena
ISSN:	1348-0391, 1348-0391
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