Electrostatic Potential Fluctuations on Oxide-Passivated Si(111) Surfaces Measured Using Integrated Scanning Probe Microscopy

Variations of the electrostatic potential were investigated for oxide-passivated n-Si(111) surfaces with atomically flat terraces by measuring the force acting on an ultra-sharp tungsten probe that was attached to the quartz resonator of an atomic force microscope. When the probe-sample gap maintain...

Full description

Bibliographic Details

Published in:	E-journal of surface science and nanotechnology Vol. 9; pp. 117 - 121
Main Authors:	Kanayama, Toshihiko, Iitake, Masanori, Nishizawa, Masayasu, Bolotov, Leonid, Tada, Tetsuya
Format:	Journal Article
Language:	English
Published:	Tokyo The Japan Society of Vacuum and Surface Science 01.01.2011 Japan Science and Technology Agency
Subjects:	Scanning Tunneling Microscopy Semiconductor-insulator interfaces Silicon Surface electronic phenomena
ISSN:	1348-0391, 1348-0391
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!