Electrostatic Potential Fluctuations on Oxide-Passivated Si(111) Surfaces Measured Using Integrated Scanning Probe Microscopy

Variations of the electrostatic potential were investigated for oxide-passivated n-Si(111) surfaces with atomically flat terraces by measuring the force acting on an ultra-sharp tungsten probe that was attached to the quartz resonator of an atomic force microscope. When the probe-sample gap maintain...

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Veröffentlicht in:	E-journal of surface science and nanotechnology Jg. 9; S. 117 - 121
Hauptverfasser:	Kanayama, Toshihiko, Iitake, Masanori, Nishizawa, Masayasu, Bolotov, Leonid, Tada, Tetsuya
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	Tokyo The Japan Society of Vacuum and Surface Science 01.01.2011 Japan Science and Technology Agency
Schlagworte:	Scanning Tunneling Microscopy Semiconductor-insulator interfaces Silicon Surface electronic phenomena
ISSN:	1348-0391, 1348-0391
Online-Zugang:	Volltext
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Zusammenfassung:	Variations of the electrostatic potential were investigated for oxide-passivated n-Si(111) surfaces with atomically flat terraces by measuring the force acting on an ultra-sharp tungsten probe that was attached to the quartz resonator of an atomic force microscope. When the probe-sample gap maintained a constant tunneling current, an enhancement of electrostatic force with a lateral extent of ∼5 nm was observed around underlying donor atoms and charged defects. Additional variations of the surface potential and the probe-sample capacitance across the surface steps were associated with excess electric charge at the step edge. [DOI: 10.1380/ejssnt.2011.117]
Bibliographie:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14
ISSN:	1348-0391 1348-0391
DOI:	10.1380/ejssnt.2011.117