The 2020 UV emitter roadmap

Solid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from 400 nm down to 210 nm-due to its large and tuneable direct band gap, n- and p-doping capability up to the largest bandgap material AlN and a...

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Vydané v:	Journal of physics. D, Applied physics Ročník 53; číslo 50
Hlavní autori:	Amano, Hiroshi, Collazo, Ramón, Santi, Carlo De, Einfeldt, Sven, Funato, Mitsuru, Glaab, Johannes, Hagedorn, Sylvia, Hirano, Akira, Hirayama, Hideki, Ishii, Ryota, Kashima, Yukio, Kawakami, Yoichi, Kirste, Ronny, Kneissl, Michael, Martin, Robert, Mehnke, Frank, Meneghini, Matteo, Ougazzaden, Abdallah, Parbrook, Peter J, Rajan, Siddharth, Reddy, Pramod, Römer, Friedhard, Ruschel, Jan, Sarkar, Biplab, Scholz, Ferdinand, Schowalter, Leo J, Shields, Philip, Sitar, Zlatko, Sulmoni, Luca, Wang, Tao, Wernicke, Tim, Weyers, Markus, Witzigmann, Bernd, Wu, Yuh-Renn, Wunderer, Thomas, Zhang, Yuewei
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	IOP Publishing 09.12.2020
Predmet:	AlGaN InGaN light emitting diodes ultraviolet UV-LED
ISSN:	0022-3727, 1361-6463
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Abstract	Solid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from 400 nm down to 210 nm-due to its large and tuneable direct band gap, n- and p-doping capability up to the largest bandgap material AlN and a growth and fabrication technology compatible with the current visible InGaN-based LED production. However AlGaN based UV-emitters still suffer from numerous challenges compared to their visible counterparts that become most obvious by consideration of their light output power, operation voltage and long term stability. Most of these challenges are related to the large bandgap of the materials. However, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance of UV emitters to be pushed far beyond the current state. One example is the very recent realization of edge emitting laser diodes emitting in the UVC at 271.8 nm and in the UVB spectral range at 298 nm. This roadmap summarizes the current state of the art for the most important aspects of UV emitters, their challenges and provides an outlook for future developments.
AbstractList	Solid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from 400 nm down to 210 nm-due to its large and tuneable direct band gap, n- and p-doping capability up to the largest bandgap material AlN and a growth and fabrication technology compatible with the current visible InGaN-based LED production. However AlGaN based UV-emitters still suffer from numerous challenges compared to their visible counterparts that become most obvious by consideration of their light output power, operation voltage and long term stability. Most of these challenges are related to the large bandgap of the materials. However, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance of UV emitters to be pushed far beyond the current state. One example is the very recent realization of edge emitting laser diodes emitting in the UVC at 271.8 nm and in the UVB spectral range at 298 nm. This roadmap summarizes the current state of the art for the most important aspects of UV emitters, their challenges and provides an outlook for future developments.
Author	Mehnke, Frank Reddy, Pramod Shields, Philip Sulmoni, Luca Einfeldt, Sven Kirste, Ronny Wang, Tao Meneghini, Matteo Wunderer, Thomas Rajan, Siddharth Santi, Carlo De Glaab, Johannes Amano, Hiroshi Weyers, Markus Römer, Friedhard Wernicke, Tim Hagedorn, Sylvia Martin, Robert Scholz, Ferdinand Collazo, Ramón Schowalter, Leo J Zhang, Yuewei Wu, Yuh-Renn Kneissl, Michael Hirayama, Hideki Parbrook, Peter J Funato, Mitsuru Ishii, Ryota Kawakami, Yoichi Sarkar, Biplab Ougazzaden, Abdallah Hirano, Akira Witzigmann, Bernd Sitar, Zlatko Kashima, Yukio Ruschel, Jan
Author_xml	– sequence: 1 givenname: Hiroshi surname: Amano fullname: Amano, Hiroshi email: r.w.martin@strath.ac.uk organization: Nagoya University , Nagoya, 464-8601, Japan – sequence: 2 givenname: Ramón surname: Collazo fullname: Collazo, Ramón organization: North Carolina State University Department of Materials Science and Engineering, Raleigh, NC, 27695, United States of America – sequence: 3 givenname: Carlo De orcidid: 0000-0001-6064-077X surname: Santi fullname: Santi, Carlo De organization: University of Padova Department of Information Engineering, via Gradenigo 6/b 35131, Padova, Italy – sequence: 4 givenname: Sven surname: Einfeldt fullname: Einfeldt, Sven organization: Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik , Gustav-Kirchhoff-Str. 4 12489, Berlin, Germany – sequence: 5 givenname: Mitsuru surname: Funato fullname: Funato, Mitsuru organization: Kyoto University, Katsura Campus Department of Electronic Science and Engineering, Nishikyo-ku, Kyoto 615-8510, Japan – sequence: 6 givenname: Johannes orcidid: 0000-0002-9252-8368 surname: Glaab fullname: Glaab, Johannes organization: Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik , Gustav-Kirchhoff-Str. 4 12489, Berlin, Germany – sequence: 7 givenname: Sylvia surname: Hagedorn fullname: Hagedorn, Sylvia organization: Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik , Gustav-Kirchhoff-Str. 4 12489, Berlin, Germany – sequence: 8 givenname: Akira surname: Hirano fullname: Hirano, Akira organization: UV Craftory Co., Ltd. , Nagoya 464-0015, Japan – sequence: 9 givenname: Hideki surname: Hirayama fullname: Hirayama, Hideki organization: RIKEN , 2-1 Hirosawa Wako, Saitama 351-0198, Japan – sequence: 10 givenname: Ryota surname: Ishii fullname: Ishii, Ryota organization: Kyoto University, Katsura Campus Department of Electronic Science and Engineering, Nishikyo-ku, Kyoto 615-8510, Japan – sequence: 11 givenname: Yukio surname: Kashima fullname: Kashima, Yukio organization: Marubun Corporation , 8-1 Oodenma-cho, Nihonbashi, Chuo Ward, Tokyo 109-8577, Japan – sequence: 12 givenname: Yoichi surname: Kawakami fullname: Kawakami, Yoichi organization: Kyoto University, Katsura Campus Department of Electronic Science and Engineering, Nishikyo-ku, Kyoto 615-8510, Japan – sequence: 13 givenname: Ronny surname: Kirste fullname: Kirste, Ronny organization: North Carolina State University Department of Materials Science and Engineering, Raleigh, NC, 27695, United States of America – sequence: 14 givenname: Michael surname: Kneissl fullname: Kneissl, Michael organization: Technische Universität Berlin, Institute of Solid State Physics , Hardenbergstr. 36, 10623 Berlin, Germany – sequence: 15 givenname: Robert orcidid: 0000-0002-6119-764X surname: Martin fullname: Martin, Robert email: r.w.martin@strath.ac.uk organization: Authors to whom any correspondence should be addressed – sequence: 16 givenname: Frank orcidid: 0000-0001-5406-0832 surname: Mehnke fullname: Mehnke, Frank organization: Georgia Institute of Technology, School of Electrical and Computer Engineering , 777 Atlantic Drive, Atlanta, GA 30332, United States of America – sequence: 17 givenname: Matteo surname: Meneghini fullname: Meneghini, Matteo organization: University of Padova Department of Information Engineering, via Gradenigo 6/b 35131, Padova, Italy – sequence: 18 givenname: Abdallah surname: Ougazzaden fullname: Ougazzaden, Abdallah organization: Georgia Institute of Technology, School of Electrical and Computer Engineering, Georgia Tech-CNRS , UMI 2958 57070, Metz, France – sequence: 19 givenname: Peter J orcidid: 0000-0003-3287-512X surname: Parbrook fullname: Parbrook, Peter J organization: Tyndall National Institute and School of Engineering, University College Cork , Cork, Ireland – sequence: 20 givenname: Siddharth surname: Rajan fullname: Rajan, Siddharth organization: The Ohio State University Department of Materials Science and Engineering, Columbus, OH 43210, United States of America – sequence: 21 givenname: Pramod surname: Reddy fullname: Reddy, Pramod organization: Adroit Materials, Inc. , 2054 Kildaire Farm Rd, Suite 205, Cary, NC 27518, United States of America – sequence: 22 givenname: Friedhard surname: Römer fullname: Römer, Friedhard organization: University of Kassel Department of Electrical Engineering/Computer Science and CINSaT, Wilhelmshoeher Allee 71 D-34121, Kassel, Germany – sequence: 23 givenname: Jan orcidid: 0000-0001-6914-0958 surname: Ruschel fullname: Ruschel, Jan organization: Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik , Gustav-Kirchhoff-Str. 4 12489, Berlin, Germany – sequence: 24 givenname: Biplab orcidid: 0000-0003-0074-0626 surname: Sarkar fullname: Sarkar, Biplab organization: Indian Institute of Technology, Roorkee Department of Electronics and Communication Engineering, Uttarakhand 247667 India – sequence: 25 givenname: Ferdinand surname: Scholz fullname: Scholz, Ferdinand organization: Institute of Functional Nanosystems, Ulm University 89069, Ulm, Germany – sequence: 26 givenname: Leo J orcidid: 0000-0002-4854-8521 surname: Schowalter fullname: Schowalter, Leo J organization: Asahi Kasei Corporation , Fuji 416-8501, Japan – sequence: 27 givenname: Philip orcidid: 0000-0003-0517-132X surname: Shields fullname: Shields, Philip organization: University of Bath Department of Electrical and Electronic Engineering, Bath BA2 7AY, United Kingdom – sequence: 28 givenname: Zlatko surname: Sitar fullname: Sitar, Zlatko organization: North Carolina State University Department of Materials Science and Engineering, Raleigh, NC, 27695, United States of America – sequence: 29 givenname: Luca orcidid: 0000-0002-5341-7032 surname: Sulmoni fullname: Sulmoni, Luca organization: Technische Universität Berlin, Institute of Solid State Physics , Hardenbergstr. 36, 10623 Berlin, Germany – sequence: 30 givenname: Tao surname: Wang fullname: Wang, Tao organization: University of Sheffield Department of Electronic and Electrical Engineering, Sheffield S1 3JD, United Kingdom – sequence: 31 givenname: Tim orcidid: 0000-0002-5472-8166 surname: Wernicke fullname: Wernicke, Tim email: tim.wernicke@physik.tu-berlin.de organization: Authors to whom any correspondence should be addressed – sequence: 32 givenname: Markus surname: Weyers fullname: Weyers, Markus organization: Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik , Gustav-Kirchhoff-Str. 4 12489, Berlin, Germany – sequence: 33 givenname: Bernd surname: Witzigmann fullname: Witzigmann, Bernd organization: University of Kassel Department of Electrical Engineering/Computer Science and CINSaT, Wilhelmshoeher Allee 71 D-34121, Kassel, Germany – sequence: 34 givenname: Yuh-Renn orcidid: 0000-0002-1457-3681 surname: Wu fullname: Wu, Yuh-Renn organization: National Taiwan University , Institute of Photonics and Optoelectronics and Department of Electrical Engineering – sequence: 35 givenname: Thomas surname: Wunderer fullname: Wunderer, Thomas organization: Electronics Materials and Devices Laboratory, PARC, a Xerox Company , 3333 Coyote Hill Road, Palo Alto, CA 94304, United States of America – sequence: 36 givenname: Yuewei orcidid: 0000-0002-4192-1442 surname: Zhang fullname: Zhang, Yuewei organization: The Ohio State University Department of Electrical and Computer Engineering, Columbus, OH 43210, United States of America
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Snippet	Solid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from...
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SubjectTerms	AlGaN InGaN light emitting diodes ultraviolet UV-LED
Title	The 2020 UV emitter roadmap
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